Inventor · disambiguated record
Haruki Toda
Also filed as: TODA HARUKI
235 granted patents·11 pending applications·4,676 citations·filing 1984–2022
99Inventor score
Top patents by PatentIndex Score
246 records- 0199US6125071ASemiconductor memory device with high data read rateTOSHIBA KK·Filed 1999·Granted Sep 26, 2000·439 cites·25 claims
- 0298US7729158B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Jun 1, 2010·97 cites·21 claims
- 0398US7606059B2Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell arrayTOSHIBA KK·Filed 2003·Granted Oct 20, 2009·162 cites·25 claims
- 0498US7459716B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Dec 2, 2008·87 cites·24 claims
- 0598US7400522B2Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cationTOSHIBA KK·Filed 2007·Granted Jul 15, 2008·88 cites·22 claims
- 0698US7394680B2Resistance change memory device having a variable resistance element with a recording layer electrode served as a cation source in a write or erase modeTOSHIBA KK·Filed 2007·Granted Jul 1, 2008·110 cites·22 claims
- 0797US8102699B2Phase change memory deviceTODA HARUKI·Filed 2010·Granted Jan 24, 2012·26 cites·20 claims
- 0897US7623370B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Nov 24, 2009·64 cites·31 claims
- 0996US6847555B2Non-volatile semiconductor memory device reading and writing multi-value data from and into pair-cellsTOSHIBA KK·Filed 2003·Granted Jan 25, 2005·86 cites·19 claims
- 1095US7459715B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Dec 2, 2008·68 cites·24 claims
- 1195US7335906B2Phase change memory deviceTOSHIBA KK·Filed 2003·Granted Feb 26, 2008·74 cites·23 claims
- 1295US6321343B1Semiconductor memory system comprising synchronous DRAM and controller thereofTOSHIBA KK·Filed 2000·Granted Nov 20, 2001·88 cites·50 claims
- 1395US5323358AClock-synchronous semiconductor memory device and method for accessing the deviceTOSHIBA KK·Filed 1993·Granted Jun 21, 1994·135 cites·9 claims
- 1494US7859885B2Phase changing memory deviceTOSHIBA KK·Filed 2008·Granted Dec 28, 2010·28 cites·47 claims
- 1594US5010518ASemiconductor memory deviceTOSHIBA KK·Filed 1989·Granted Apr 23, 1991·88 cites·17 claims
- 1693US8269207B2Memory device having variable resistance memory cells disposed at crosspoint of wiringsTODA HARUKI·Filed 2011·Granted Sep 18, 2012·14 cites·20 claims
- 1793US8237143B2Phase change memory deviceTODA HARUKI·Filed 2011·Granted Aug 7, 2012·14 cites·18 claims
- 1893US8031508B2Resistance change memory deviceTOSHIBA KK·Filed 2008·Granted Oct 4, 2011·25 cites·21 claims
- 1993US8023313B2Resistance change memory deviceTOSHIBA KK·Filed 2009·Granted Sep 20, 2011·26 cites·14 claims
- 2093US7889538B2Three-dimensional memory deviceTOSHIBA KK·Filed 2009·Granted Feb 15, 2011·30 cites·19 claims
- 2193US7706167B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Apr 27, 2010·32 cites·6 claims
- 2293US7369433B2Semiconductor memory deviceTOSHIBA KK·Filed 2006·Granted May 6, 2008·27 cites·21 claims
- 2393US6449727B1High-speed data transfer synchronizing system and methodTOSHIBA KK·Filed 1999·Granted Sep 10, 2002·184 cites·22 claims
- 2493US5867432AClock control circuitTOSHIBA KK·Filed 1997·Granted Feb 2, 1999·87 cites·26 claims
- 2592US8022381B2Phase change memory deviceTOSHIBA KK·Filed 2010·Granted Sep 20, 2011·12 cites·13 claims
- 2692US7755934B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Jul 13, 2010·29 cites·28 claims
- 2792US7561464B2Semiconductor memory deviceTOSHIBA KK·Filed 2008·Granted Jul 14, 2009·24 cites·17 claims
- 2892US4603403AData output circuit for dynamic memory deviceTOSHIBA KK·Filed 1984·Granted Jul 29, 1986·61 cites·3 claims
- 2991US7750334B2Phase change memory deviceTOSHIBA KK·Filed 2007·Granted Jul 6, 2010·18 cites·25 claims
- 3091US6484246B2High-speed random access semiconductor memory deviceTOSHIBA KK·Filed 1999·Granted Nov 19, 2002·61 cites·42 claims
- 3191US5926436ASemiconductor memory deviceTOSHIBA KK·Filed 1998·Granted Jul 20, 1999·54 cites·9 claims
- 3290US8259489B2Nonvolatile semiconductor memory device generating different write pulses to vary resistancesNAGASHIMA HIROYUKI·Filed 2008·Granted Sep 4, 2012·14 cites·17 claims
- 3390US7989789B2Phase-change memory device that stores information in a non-volatile manner by changing states of a memory materialTOSHIBA KK·Filed 2003·Granted Aug 2, 2011·42 cites·5 claims
- 3490US7767993B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Aug 3, 2010·19 cites·18 claims
- 3590US7529130B2Semiconductor memory deviceTOSHIBA KK·Filed 2006·Granted May 5, 2009·23 cites·20 claims
- 3690US7468914B2Semiconductor memory device and data write method thereofTOSHIBA KK·Filed 2006·Granted Dec 23, 2008·24 cites·14 claims
- 3790US6807096B2Nonvolatile semiconductor memoryTOSHIBA KK·Filed 2003·Granted Oct 19, 2004·53 cites·50 claims
- 3889US7719875B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted May 18, 2010·23 cites·6 claims
- 3989US7495963B2Semiconductor memory deviceTOSHIBA KK·Filed 2007·Granted Feb 24, 2009·21 cites·20 claims
- 4088US8537595B2Resistance change memory deviceTODA HARUKI·Filed 2011·Granted Sep 17, 2013·10 cites·18 claims
- 4188US8258496B2Semiconductor integrated circuit device having memory cells disposed at cross point of metal lines and method for fabricating the sameTODA HARUKI·Filed 2009·Granted Sep 4, 2012·25 cites·8 claims
- 4288US6480423B2High-speed cycle clock-synchronous memory deviceTOSHIBA KK·Filed 2001·Granted Nov 12, 2002·36 cites·36 claims
- 4388US6430101B1Fuse circuit using anti-fuse and method for searching for failed address in semiconductor memoryTOSHIBA KK·Filed 2001·Granted Aug 6, 2002·39 cites·21 claims
- 4488US5313437ASemiconductor memory deviceTOSHIBA KK·Filed 1991·Granted May 17, 1994·42 cites·13 claims
- 4587US5973991ASemiconductor memory capable of successively accessing cell array blocks with a plurality of operation modes having different cycle timesTOSHIBA KK·Filed 1999·Granted Oct 26, 1999·47 cites·14 claims
- 4686US9520188B2Semiconductor memory deviceTOSHIBA KK·Filed 2015·Granted Dec 13, 2016·7 cites·14 claims
- 4786US8665632B2Semiconductor memory deviceTODA HARUKI·Filed 2012·Granted Mar 4, 2014·8 cites·20 claims
- 4886US8102697B2Three-dimensional programmable resistance memory device with a read/write circuit stacked under a memory cell arrayTODA HARUKI·Filed 2010·Granted Jan 24, 2012·7 cites·9 claims
- 4986US7989794B2Resistance change memory device for storing information in a non-volatile manner by changing resistance of memory materialTOSHIBA KK·Filed 2010·Granted Aug 2, 2011·9 cites·14 claims
- 5085US7778062B2Resistance change memory deviceTOSHIBA KK·Filed 2007·Granted Aug 17, 2010·16 cites·21 claims
Showing the top 50 of 246 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →