Inventor · disambiguated record
Haiting Wang
Also filed as: WANG HAITING
132 granted patents·14 pending applications·408 citations·filing 2009–2024
99Inventor score
Files withGLOBALFOUNDRIES INC77GLOBALFOUNDRIES US INC53BEIJING DIGITAL UNION WEB SCIENCE AND TECH COMPANY LIMITED3TAIWAN SEMICONDUCTOR MFG3BEIJING MICROLIVE VISION TECH CO LTD2
Top patents by PatentIndex Score
146 records- 0199US9653583B1Methods of forming diffusion breaks on integrated circuit products comprised of finFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 16, 2017·79 cites·25 claims
- 0298US10083874B1Gate cut methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·38 cites·18 claims
- 0397US9935104B1Fin-type field effect transistors with single-diffusion breaks and methodGLOBALFOUNDRIES INC·Filed 2017·Granted Apr 3, 2018·16 cites·14 claims
- 0496US10373877B1Methods of forming source/drain contact structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·18 cites·20 claims
- 0595US11705508B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 18, 2023·2 cites·19 claims
- 0695US8502316B2Self-aligned two-step STI formation through dummy poly removalFUNG KA-HING·Filed 2010·Granted Aug 6, 2013·23 cites·20 claims
- 0794US11967637B2Fin-based lateral bipolar junction transistor with reduced base resistance and methodGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0894US9443771B1Methods to thin down RMG sidewall layers for scalability of gate-last planar CMOS and FinFET technologyGLOBALFOUNDRIES INC·Filed 2015·Granted Sep 13, 2016·10 cites·17 claims
- 0993US10388652B2Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming sameGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 20, 2019·10 cites·14 claims
- 1093US10373875B1Contacts formed with self-aligned cutsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 6, 2019·7 cites·9 claims
- 1193US10153209B1Insulating gate separation structure and methods of making sameGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 11, 2018·8 cites·13 claims
- 1293US9425100B1Methods of facilitating fabricating transistorsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 23, 2016·15 cites·14 claims
- 1393US8722485B1Integrated circuits having replacement gate structures and methods for fabricating the sameGLOBALFOUNDRIES INC·Filed 2013·Granted May 13, 2014·19 cites·22 claims
- 1492US9331159B1Fabricating transistor(s) with raised active regions having angled upper surfacesGLOBALFOUNDRIES INC·Filed 2015·Granted May 3, 2016·10 cites·20 claims
- 1592US8324668B2Dummy structure for isolating devices in integrated circuitsHUANG LI-PING·Filed 2009·Granted Dec 4, 2012·31 cites·23 claims
- 1691US10586860B2Method of manufacturing finfet devices using narrow and wide gate cut openings in conjunction with a replacement metal gate processGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·6 cites·10 claims
- 1791US10192746B1STI inner spacer to mitigate SDB loadingGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 29, 2019·12 cites·14 claims
- 1890US11127842B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 21, 2021·4 cites·19 claims
- 1990US10396206B2Gate cut methodGLOBALFOUNDRIES INC·Filed 2017·Granted Aug 27, 2019·7 cites·16 claims
- 2090US9418899B1Method of multi-WF for multi-Vt and thin sidewall deposition by implantation for gate-last planar CMOS and FinFET technologyGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 16, 2016·8 cites·14 claims
- 2189US9984933B1Silicon liner for STI CMP stop in FinFETGLOBALFOUNDRIES INC·Filed 2017·Granted May 29, 2018·7 cites·20 claims
- 2288US10707303B1Method, apparatus, and system for improving scaling of isolation structures for gate, source, and/or drain contactsGLOBALFOUNDRIES INC·Filed 2019·Granted Jul 7, 2020·5 cites·18 claims
- 2387US11710771B2Non-self-aligned lateral bipolar junction transistorsGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
- 2485US11652142B2Lateral bipolar junction transistors having an emitter extension and a halo regionGLOBALFOUNDRIES US INC·Filed 2021·Granted May 16, 2023·1 cites·20 claims
- 2585US10692987B2IC structure with air gap adjacent to gate structure and methods of forming sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jun 23, 2020·4 cites·20 claims
- 2684US10586736B2Hybrid fin cut with improved fin profilesGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·4 cites·19 claims
- 2784US10522410B2Performing concurrent diffusion break, gate and source/drain contact cut etch processesGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 31, 2019·4 cites·20 claims
- 2881US11342453B2Field effect transistor with asymmetric gate structure and methodGLOBALFOUNDRIES US INC·Filed 2020·Granted May 24, 2022·1 cites·14 claims
- 2981US10872979B2Spacer structures for a transistor deviceGLOBALFOUNDRIES INC·Filed 2020·Granted Dec 22, 2020·1 cites·17 claims
- 3080US11785860B2Top electrode for a memory device and methods of making such a memory deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 10, 2023·1 cites·20 claims
- 3180US10580701B1Methods of making a self-aligned gate contact structure and source/drain metallization structures on integrated circuit productsGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 3, 2020·2 cites·16 claims
- 3280US10121788B1Fin-type field effect transistors with single-diffusion breaks and methodGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 6, 2018·2 cites·20 claims
- 3379US12107154B2Single fin structuresGLOBALFOUNDRIES US INC·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 3479US11164795B2Transistors with source/drain regions having sections of epitaxial semiconductor materialGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 2, 2021·1 cites·20 claims
- 3579US10707175B2Asymmetric overlay mark for overlay measurementGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 7, 2020·3 cites·19 claims
- 3679US10403742B2Field-effect transistors with fins formed by a damascene-like processGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 3, 2019·2 cites·14 claims
- 3778US12159926B2Lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 3, 2024·0 cites·19 claims
- 3878US10629694B1Gate contact and cross-coupling contact formationGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 21, 2020·2 cites·20 claims
- 3977US11037821B2Multiple patterning with self-alignment provided by spacersGLOBALFOUNDRIES US INC·Filed 2019·Granted Jun 15, 2021·2 cites·13 claims
- 4077US10475890B2Scaled memory structures or other logic devices with middle of the line cutsGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 12, 2019·2 cites·14 claims
- 4177US10361289B1Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·18 claims
- 4276US11018221B2Air gap regions of a semiconductor deviceGLOBALFOUNDRIES US INC·Filed 2019·Granted May 25, 2021·2 cites·12 claims
- 4375US2025022915A1Device with vertical nanowire channel regionGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 4474US11094794B2Air spacer structuresGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 17, 2021·1 cites·8 claims
- 4573US11895426B2Method and apparatus for capturing video, electronic device and computer-readable storage mediumBEIJING MICROLIVE VISION TECH CO LTD·Filed 2018·Granted Feb 6, 2024·2 cites·12 claims
- 4673US9312145B2Conformal nitridation of one or more fin-type transistor layersGLOBALFOUNDRIES INC·Filed 2014·Granted Apr 12, 2016·2 cites·18 claims
- 4772US10825913B2Methods, apparatus, and manufacturing system for FinFET devices with reduced parasitic capacitanceGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 3, 2020·1 cites·8 claims
- 4872US10629739B2Methods of forming spacers adjacent gate structures of a transistor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Apr 21, 2020·1 cites·19 claims
- 4971US10840245B1Semiconductor device with reduced parasitic capacitanceGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 17, 2020·1 cites·20 claims
- 5071US9379186B1Fet structure for minimum size length/width devices for performance boost and mismatch reductionGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 28, 2016·2 cites·18 claims
Showing the top 50 of 146 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →