Inventor · disambiguated record
Hans Weber
Also filed as: WEBER HANS · WEBER HANS-MARTIN
109 granted patents·8 pending applications·673 citations·filing 1998–2024
99Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG54INFINEON TECHNOLOGIES AG29INFINEON TECHNOLOGIES AUSTRIA19WEBER HANS9HIRLER FRANZ1
Top patents by PatentIndex Score
117 records- 0195US11323099B2Electronic circuit with a transistor device and a biasing circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted May 3, 2022·4 cites·24 claims
- 0294US6630698B1High-voltage semiconductor componentINFINEON AG·Filed 1999·Granted Oct 7, 2003·115 cites·11 claims
- 0393US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 0493US6388287B2Switch mode power supply with reduced switching lossesINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 14, 2002·81 cites·5 claims
- 0591US9012980B1Method of manufacturing a semiconductor device including proton irradiation and semiconductor device including charge compensation structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·11 cites·20 claims
- 0690US8866221B2Super junction semiconductor device comprising a cell area and an edge areaHIRLER FRANZ·Filed 2012·Granted Oct 21, 2014·12 cites·26 claims
- 0789US9653540B2Semiconductor wafer and method of manufacturing semiconductor devices in a semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted May 16, 2017·5 cites·14 claims
- 0888US11211483B2Method for forming an insulation layer in a semiconductor body and transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 28, 2021·4 cites·23 claims
- 0988US10811529B2Transistor device with gate resistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Oct 20, 2020·5 cites·16 claims
- 1088US9711357B1Method of manufacturing a semiconductor device with epitaxial layers and an alignment structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 18, 2017·6 cites·19 claims
- 1188US6828609B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 7, 2004·41 cites·7 claims
- 1287US11894445B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Feb 6, 2024·1 cites·14 claims
- 1387US8421196B2Semiconductor device and manufacturing methodWEBER HANS·Filed 2009·Granted Apr 16, 2013·9 cites·17 claims
- 1487US6870201B1High voltage resistant edge structure for semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 1998·Granted Mar 22, 2005·74 cites·30 claims
- 1586US9704984B2Super-junction semiconductor device comprising junction termination extension structure and method of manufacturingINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 11, 2017·5 cites·15 claims
- 1686US9166005B2Semiconductor device with charge compensation structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Oct 20, 2015·8 cites·11 claims
- 1785US10109489B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 23, 2018·3 cites·26 claims
- 1885US6639272B2Charge compensation semiconductor configurationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 28, 2003·38 cites·12 claims
- 1984US8866222B2Charge compensation semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Oct 21, 2014·5 cites·9 claims
- 2084US8633095B2Semiconductor device with voltage compensation structureSCHULZE HANS-JOACHIM·Filed 2011·Granted Jan 21, 2014·6 cites·16 claims
- 2183US8803205B2Transistor with controllable compensation regionsWILLMEROTH ARMIN·Filed 2012·Granted Aug 12, 2014·7 cites·28 claims
- 2283US8749018B2Integrated semiconductor device having an insulating structure and a manufacturing methodSTECHER MATTHIAS·Filed 2010·Granted Jun 10, 2014·7 cites·20 claims
- 2383US7867879B2Method for dividing a semiconductor substrate and a method for producing a semiconductor circuit arrangementINFINEON TECHNOLOGIES AG·Filed 2008·Granted Jan 11, 2011·8 cites·16 claims
- 2483US6960798B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 1, 2005·25 cites·18 claims
- 2582US10923432B2Method of manufacturing a semiconductor device with epitaxial layers and an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 16, 2021·1 cites·18 claims
- 2681US9070580B2Semiconductor device with a super junction structure based on a compensation structure with compensation layers and having a compensation rate gradientINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Jun 30, 2015·6 cites·12 claims
- 2780US8901717B2Semiconductor device and manufacturing methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Dec 2, 2014·3 cites·5 claims
- 2878US12484242B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Nov 25, 2025·0 cites·13 claims
- 2978US10128328B2Method of manufacturing semiconductor devices and semiconductor device containing hydrogen-related donorsINFINEON TECHNOLOGIES AG·Filed 2017·Granted Nov 13, 2018·2 cites·23 claims
- 3078US6667514B2Semiconductor component with a charge compensation structure and associated fabricationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 23, 2003·24 cites·15 claims
- 3178US2024321953A1Superjunction transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 3277US10553681B2Forming a superjunction transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 4, 2020·2 cites·28 claims
- 3377US10074715B2Semiconductor wafer, implantation apparatus for implanting protons and method for forming a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 11, 2018·2 cites·19 claims
- 3476US9147763B2Charge-compensation semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 29, 2015·4 cites·20 claims
- 3576US7943449B2Semiconductor component structure with vertical dielectric layersINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 17, 2011·6 cites·20 claims
- 3675US8716788B2Semiconductor device with self-charging field electrodesWEBER HANS·Filed 2011·Granted May 6, 2014·4 cites·19 claims
- 3774US11728790B2Electronic circuit having a transistor device and a biasing circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Aug 15, 2023·0 cites·25 claims
- 3874US10679855B2Method for producing a superjunction deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 9, 2020·1 cites·17 claims
- 3974US9570576B2Method for forming a semiconductor device having insulating parts or layers formed via anodic oxidationINFINEON TECHNOLOGIES AG·Filed 2013·Granted Feb 14, 2017·2 cites·6 claims
- 4074US6894329B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 17, 2005·15 cites·18 claims
- 4173US6819089B2Power factor correction circuit with high-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 16, 2004·19 cites·35 claims
- 4272US12273098B2Method for operating a power transistor circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Apr 8, 2025·0 cites·18 claims
- 4372US10411126B2Semiconductor device having a first through contact structure in ohmic contact with the gate electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Sep 10, 2019·1 cites·11 claims
- 4472US10374032B2Field-effect semiconductor device having N and P-doped pillar regionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Aug 6, 2019·1 cites·14 claims
- 4572US6825514B2High-voltage semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Nov 30, 2004·15 cites·5 claims
- 4671US12034040B2Superjunction transistor device and method for forming a superjunction transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jul 9, 2024·0 cites·9 claims
- 4771US7923330B2Method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Apr 12, 2011·5 cites·20 claims
- 4870US10950487B2Method for forming an alignment markINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 16, 2021·1 cites·20 claims
- 4970US9905639B2Method of manufacturing superjunction semiconductor devices with a superstructure in alignment with a foundationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 27, 2018·1 cites·15 claims
- 5070US9293528B2Field-effect semiconductor device and manufacturing thereforINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 22, 2016·2 cites·18 claims
Showing the top 50 of 117 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Hans Weber files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →