Inventor · disambiguated record
Haizhou Yin
Also filed as: YIN HAIZHOU
173 granted patents·71 pending applications·733 citations·filing 2005–2023
99Inventor score
Top patents by PatentIndex Score
244 records- 0198US8835316B2Transistor with primary and semiconductor spacer, method for manufacturing transistor, and semiconductor chip comprising the transistorYIN HAIZHOU·Filed 2011·Granted Sep 16, 2014·77 cites·9 claims
- 0297US8043920B2finFETS and methods of making sameIBM·Filed 2009·Granted Oct 25, 2011·91 cites·12 claims
- 0397US7547616B2Laser processing method for trench-edge-defect-free solid phase epitaxy in confined geometricsIBM·Filed 2006·Granted Jun 16, 2009·30 cites·1 claims
- 0494US8674449B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Mar 18, 2014·19 cites·13 claims
- 0593US9087691B2Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jul 21, 2015·14 cites·11 claims
- 0693US8450813B2Fin transistor structure and method of fabricating the sameLUO ZHIJIONG·Filed 2010·Granted May 28, 2013·17 cites·20 claims
- 0792US8803208B2Method for fabricating contact electrode and semiconductor deviceZHU HUILONG·Filed 2011·Granted Aug 12, 2014·13 cites·8 claims
- 0892US7968915B2Dual stress memorization technique for CMOS applicationIBM·Filed 2009·Granted Jun 28, 2011·17 cites·6 claims
- 0992US7525162B2Orientation-optimized PFETS in CMOS devices employing dual stress linersIBM·Filed 2007·Granted Apr 28, 2009·24 cites·21 claims
- 1091US8669155B2Hybrid channel semiconductor device and method for forming the sameYIN HAIZHOU·Filed 2011·Granted Mar 11, 2014·14 cites·8 claims
- 1190US8728881B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted May 20, 2014·11 cites·6 claims
- 1290US7834399B2Dual stress memorization technique for CMOS applicationIBM·Filed 2007·Granted Nov 16, 2010·15 cites·6 claims
- 1389US8410544B2finFETs and methods of making sameCHAN KEVIN K·Filed 2011·Granted Apr 2, 2013·10 cites·20 claims
- 1489US8232178B2Method for forming a semiconductor device with stressed trench isolationYIN HAIZHOU·Filed 2011·Granted Jul 31, 2012·10 cites·9 claims
- 1589US7897468B1Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded islandIBM·Filed 2009·Granted Mar 1, 2011·15 cites·21 claims
- 1689US7525161B2Strained MOS devices using source/drain epitaxyIBM·Filed 2007·Granted Apr 28, 2009·17 cites·9 claims
- 1788US8729638B2Method for making FINFETs and semiconductor structures formed therefromZHU HUILONG·Filed 2011·Granted May 20, 2014·9 cites·8 claims
- 1888US8198673B2Asymmetric epitaxy and application thereofYIN HAIZHOU·Filed 2011·Granted Jun 12, 2012·8 cites·8 claims
- 1987US8642471B2Semiconductor structure and method for manufacturing the sameYIN HAIZHOU·Filed 2011·Granted Feb 4, 2014·9 cites·12 claims
- 2086US8643061B2Structure of high-K metal gate semiconductor transistorYIN HAIZHOU·Filed 2010·Granted Feb 4, 2014·8 cites·20 claims
- 2186US8587066B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2012·Granted Nov 19, 2013·7 cites·19 claims
- 2286US7396407B2Trench-edge-defect-free recrystallization by edge-angle-optimized solid phase epitaxy: method and applications to hybrid orientation substratesIBM·Filed 2006·Granted Jul 8, 2008·9 cites·8 claims
- 2386US7384851B2Buried stress isolation for high-performance CMOS technologyIBM·Filed 2005·Granted Jun 10, 2008·11 cites·18 claims
- 2486US7291539B2Amorphization/templated recrystallization method for hybrid orientation substratesIBM·Filed 2005·Granted Nov 6, 2007·7 cites·14 claims
- 2585US8546910B2Semiconductor structure and method for manufacturing the sameYIN HAIZHOU·Filed 2011·Granted Oct 1, 2013·7 cites·10 claims
- 2684US8673704B2FinFET and method for manufacturing the sameZHU HUILONG·Filed 2012·Granted Mar 18, 2014·7 cites·10 claims
- 2784US8441050B2Fin transistor structure and method of fabricating the sameLUO ZHIJIONG·Filed 2011·Granted May 14, 2013·7 cites·13 claims
- 2884US8138029B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2010·Granted Mar 20, 2012·6 cites·19 claims
- 2984US8105887B2Inducing stress in CMOS deviceLUO ZHIJIONG·Filed 2009·Granted Jan 31, 2012·9 cites·7 claims
- 3083US7704839B2Buried stress isolation for high-performance CMOS technologyIBM·Filed 2008·Granted Apr 27, 2010·8 cites·26 claims
- 3182US9324835B2Method for manufacturing MOSFETINST OF MICROELECTRONICS CAS·Filed 2012·Granted Apr 26, 2016·5 cites·14 claims
- 3282US8981454B2Non-volatile memory device using finfet and method for manufacturing the sameZHU HUILONG·Filed 2010·Granted Mar 17, 2015·6 cites·11 claims
- 3382US8658507B2MOSFET structure and method of fabricating the same using replacement channel layerZHU HUILONG·Filed 2010·Granted Feb 25, 2014·6 cites·16 claims
- 3482US8541280B2Semiconductor structure and method for manufacturing the sameYIN HAIZHOU·Filed 2011·Granted Sep 24, 2013·6 cites·11 claims
- 3582US8497197B2Method for manufacturing a high-performance semiconductor structure with a replacement gate process and a stress memorization techniqueZHU HUILONG·Filed 2010·Granted Jul 30, 2013·5 cites·11 claims
- 3682US8445973B2Fin transistor structure and method of fabricating the sameLUO ZHIJIONG·Filed 2010·Granted May 21, 2013·6 cites·19 claims
- 3781US9496178B2Semiconductor device having fins of different heights and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Nov 15, 2016·6 cites·4 claims
- 3880US9543188B2Isolation structure, method for manufacturing the same, and semiconductor device having the structureLUO ZHIJIONG·Filed 2011·Granted Jan 10, 2017·5 cites·8 claims
- 3980US8664091B2Method for removing metallic nanotubeZHU HUILONG·Filed 2011·Granted Mar 4, 2014·5 cites·10 claims
- 4080US7704852B2Amorphization/templated recrystallization method for hybrid orientation substratesIBM·Filed 2007·Granted Apr 27, 2010·4 cites·10 claims
- 4179US9349867B2Semiconductor devices and methods for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2012·Granted May 24, 2016·4 cites·20 claims
- 4279US8361851B2Method for manufacturing an NMOS with improved carrier mobilityINST OF MICROELECTRONICS CAS·Filed 2010·Granted Jan 29, 2013·5 cites·16 claims
- 4379US7541629B1Embedded insulating band for controlling short-channel effect and leakage reduction for DSB processIBM·Filed 2008·Granted Jun 2, 2009·7 cites·1 claims
- 4477US8673701B2Semiconductor structure and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Mar 18, 2014·4 cites·14 claims
- 4577US8664054B2Method for forming semiconductor structureZHU HUILONG·Filed 2011·Granted Mar 4, 2014·4 cites·12 claims
- 4677US8236636B2Hybrid orientation semiconductor structure with reduced boundary defects and method of forming sameYIN HAIZHOU·Filed 2010·Granted Aug 7, 2012·3 cites·20 claims
- 4777US7989297B2Asymmetric epitaxy and application thereofIBM·Filed 2009·Granted Aug 2, 2011·5 cites·20 claims
- 4876US9691899B2Semiconductor structure and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2012·Granted Jun 27, 2017·4 cites·6 claims
- 4976US8878280B2Flash memory device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Nov 4, 2014·4 cites·13 claims
- 5076US8829621B2Semiconductor substrate for manufacturing transistors having back-gates thereonZHU HUILONG·Filed 2011·Granted Sep 9, 2014·4 cites·19 claims
Showing the top 50 of 244 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Haizhou Yin files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →