Inventor · disambiguated record
Hengyuan Lee
Also filed as: LEE HENGYUAN
18 granted patents·11 pending applications·34 citations·filing 2006–2025
89Inventor score
Top patents by PatentIndex Score
29 records- 0189US8362454B2Resistive random access memory having metal oxide layer with oxygen vacancies and method for fabricating the sameIND TECH RES INST·Filed 2008·Granted Jan 29, 2013·21 cites·35 claims
- 0284US12302765B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0382US12114512B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0482US12035542B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 0582US2024373651A1Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0681US2025279138A1First fire operation for ovonic threshold switch selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0780US7745811B2Phase change memory devices and methods for fabricating the sameIND TECH RES INST·Filed 2006·Granted Jun 29, 2010·13 cites·15 claims
- 0878US2025255200A1Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0977US12334147B2First fire operation for ovonic threshold switch selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1074US11944019B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 1173US12400710B2Memory selector threshold voltage recoveryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1272US12342548B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 1372US11805661B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 31, 2023·0 cites·20 claims
- 1472US2025301664A1Ovonic threshold switch selector and memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1571US2025095730A1Memory circuit and method for reading memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1670US11955173B2First fire operation for ovonic threshold switch selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
- 1767US2024179923A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1866US12198759B2Memory circuit and method for reading memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1963US12014774B2Memory selector threshold voltage recoveryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 2062US12469553B2Operating method, memory system, and control circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 2162US2025159908A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2261US2025159909A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2357US2024040802A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2455US2024074337A1Memory device and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2554US2024016072A1Memory cell, integrated circuit, and manufacturing method of memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2653US11990182B2Operation methods for ovonic threshold selector, memory device and memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2751US12249369B2Adjusting operation voltage of cross point memory according to aging informationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 2850US7781298B2Methods for fabricating a capacitorIND TECH RES INST·Filed 2008·Granted Aug 24, 2010·0 cites·18 claims
- 2945US7405122B2Methods for fabricating a capacitorIND TECH RES INST·Filed 2006·Granted Jul 29, 2008·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →