Inventor · disambiguated record
Heon Lee
Also filed as: LEE HEON · LEE HEON C
13 granted patents·1 pending application·301 citations·filing 1992–2003
93Inventor score
Top patents by PatentIndex Score
14 records- 0192US6440793B1Vertical MOSFETIBM·Filed 2001·Granted Aug 27, 2002·70 cites·6 claims
- 0288US6355520B1Method for fabricating 4F2 memory cells with improved gate conductor structureINFINEON TECHNOLOGIES AG·Filed 1999·Granted Mar 12, 2002·73 cites·19 claims
- 0383US6414347B1Vertical MOSFETIBM·Filed 2001·Granted Jul 2, 2002·31 cites·10 claims
- 0481US6261924B1Maskless process for self-aligned contactsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 17, 2001·32 cites·18 claims
- 0575US6294436B1Method for fabrication of enlarged stacked capacitors using isotropic etchingINFINEON TECHNOLOGIES AG·Filed 1999·Granted Sep 25, 2001·34 cites·20 claims
- 0672US6326260B1Gate prespacers for high density, high performance DRAMsIBM·Filed 2000·Granted Dec 4, 2001·16 cites·14 claims
- 0751US6573192B1Dual thickness gate oxide fabrication method using plasma surface treatmentINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jun 3, 2003·4 cites·3 claims
- 0848US7153781B2Method to etch poly Si gate stacks with raised STI structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 26, 2006·4 cites·20 claims
- 0947US6838339B2Area-efficient stack capacitorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 4, 2005·4 cites·14 claims
- 1046US6362033B1Self-aligned LDD formation with one-step implantation for transistor formationINFINEON TECHNOLOGIES AG·Filed 1999·Granted Mar 26, 2002·13 cites·25 claims
- 1145US6753252B2Contact plug formation for devices with stacked capacitorsINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 22, 2004·2 cites·15 claims
- 1238US6352934B1Sidewall oxide process for improved shallow junction formation in support regionINFINEON TECHNOLOGIES AG·Filed 1999·Granted Mar 5, 2002·8 cites·27 claims
- 1336US5264391AMethod of forming a self-aligned contact utilizing a polysilicon layerHYUNDAI ELECTRONICS IND·Filed 1992·Granted Nov 23, 1993·10 cites·10 claims
- 1436US2001054729A1Gate prespacers for high density, high performance dramsIBM·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →