Inventor · disambiguated record
Heung-Soo Lim
Also filed as: LIM HEUNG-SOO
18 granted patents·1 pending application·134 citations·filing 2003–2014
94Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15JEONG JAE-YONG2SAMSUNG ELECTROINCS CO LTD1SAMSUNG ELECTRONIS CO LTD1
Top patents by PatentIndex Score
19 records- 0188US7405977B2Flash memory device with improved read speedSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 29, 2008·22 cites·18 claims
- 0280US7539077B2Flash memory device having a data buffer and programming method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 26, 2009·12 cites·16 claims
- 0380US7072214B2NOR flash memory device and method of shortening a program timeSAMSUNG ELECTRONIS CO LTD·Filed 2004·Granted Jul 4, 2006·18 cites·26 claims
- 0479US7426143B2Semiconductor memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 16, 2008·10 cites·23 claims
- 0579US7286413B2Non-volatile memory device and method of programming sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·10 cites·21 claims
- 0672US9478298B2Memory system and method of reading data thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 25, 2016·4 cites·15 claims
- 0770US7099211B2Flash memory device capable of reducing test time and test method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 29, 2006·6 cites·14 claims
- 0867US7433244B2Flash memory device and related erase operationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 7, 2008·6 cites·26 claims
- 0964US7742341B2Semiconductor memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 22, 2010·4 cites·7 claims
- 1064US7599222B2Semiconductor memory device using pipelined-buffer programming and related methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·5 cites·16 claims
- 1163US7480182B2NOR flash memory devices in which a program verify operation is performed on selected memory cells and program verify methods associated therewithSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 20, 2009·5 cites·20 claims
- 1263US7180790B2Non-volatile memory device having controlled bulk voltage and method of programming sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 20, 2007·4 cites·17 claims
- 1361US7130240B2Semiconductor memory system and method for multi-sector erase operationSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 31, 2006·11 cites·21 claims
- 1459US7352623B2NOR flash memory device with multi level cell and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 1, 2008·4 cites·23 claims
- 1558US7457165B2Non-volatile memory device and method of programming sameSAMSUNG ELECTROINCS CO LTD·Filed 2007·Granted Nov 25, 2008·3 cites·19 claims
- 1655US7123528B2Flash memory device having column predecoder capable of selecting all column selection transistors and stress test method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 17, 2006·7 cites·20 claims
- 1740US8180976B2Programming non-volatile memory devices based on data logic valuesJEONG JAE-YONG·Filed 2004·Granted May 15, 2012·3 cites·17 claims
- 1837US7668015B2Nonvolatile memory devices capable of reducing data programming time and methods of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 23, 2010·0 cites·22 claims
- 1937US2007109873A1Non-volatile memory device having controlled bulk voltage and method of programming sameJEONG JAE-YONG·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →