Non-volatile memory device having controlled bulk voltage and method of programming same

Abstract

Disclosed is a non-volatile memory device and a method of programming the same. The non-volatile memory device is programmed by applying a wordline voltage, a bitline voltage, and a bulk voltage to memory cells within the device. During a programming operation for the device, the bulk voltage is generated by a first pump. However, where the bulk voltage exceeds a predetermined detection voltage, a second pump is further activated in order to lower the bulk voltage.

1 . A method of programming a non-volatile memory device, the method comprising: 
 generating a bulk voltage using a first pump;    detecting whether or not the bulk voltage is higher than a detection voltage; and    activating a second pump to generate the bulk voltage in cases where the bulk voltage becomes higher than the detection voltage.    
   
   
       2 . The method of  claim 1 , wherein whether or not the bulk voltage is higher than a detection voltage is detected after the bulk voltage has reached a target bulk voltage  
   
   
       3 . The method of  claim 2 , wherein the first and second pumps are operated simultaneously whenever the bulk voltage is higher than the detection voltage during a programming section of a programming operation.  
   
   
       4 . The method of  claim 2 , wherein the second pump is only operated in cases where the bulk voltage has been detected to be higher than the detection voltage.  
   
   
       5 . The method of  claim 2 , wherein detecting whether or not the bulk voltage is higher than the detection voltage only occurs while a bitline voltage is provided to a bitline.  
   
   
       6 . The method of  claim 2 , further comprising: inactivating the second pump when the bulk voltage becomes lower than the detection voltage in each programming section of the programming operation.