Inventor · disambiguated record
Heimanu Niebojewski
Also filed as: NIEBOJEWSKI HEIMANU
18 granted patents·16 pending applications·54 citations·filing 2013–2025
90Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE19GLOBALFOUNDRIES INC5COMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES4GLOBALFOUNDRIES US INC2ST MICROELECTRONICS SA2
Top patents by PatentIndex Score
34 records- 0197US12002869B2Gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 4, 2024·4 cites·16 claims
- 0297US10236215B1Methods of forming gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 19, 2019·22 cites·19 claims
- 0392US10651284B2Methods of forming gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES INC·Filed 2017·Granted May 12, 2020·7 cites·18 claims
- 0490US10790148B2Method to increase effective gate heightGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 29, 2020·6 cites·20 claims
- 0588US9117805B2Air-spacer MOS transistorST MICROELECTRONICS SA·Filed 2014·Granted Aug 25, 2015·11 cites·15 claims
- 0679US8962399B2Method of making a semiconductor layer having at least two different thicknessesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Feb 24, 2015·4 cites·18 claims
- 0769US2025212699A1Quantum device with stacked qubitsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 0869US2025212701A1Quantum device with stacked qubits and without diagonal couplingCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 0969US2025212700A1Quantum device with superimposed qubits and laterally controlledCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1065US11469309B2Gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 11, 2022·0 cites·10 claims
- 1161US2025159955A1Method for manufacturing a quantum electronic circuit with a reduced gate pitchCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2024·Application pending·0 cites
- 1260US2024405103A1Method for producing a semiconductor device comprising a side gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2024·Application pending·0 cites
- 1359US12376350B2Method for manufacturing a quantum electronic circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Jul 29, 2025·0 cites·14 claims
- 1457US2024213091A1Method for producing a semiconductive device comprising a back gateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1557US2025015212A1Quantum device for forming an array of quantum dots and associated manufacturing methodCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 1656US10490455B2Gate contact structures and cross-coupled contact structures for transistor devicesGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 26, 2019·0 cites·13 claims
- 1756US2024321893A1Quantum electronic circuit and method for manufacturing the sameCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2024·Application pending·0 cites
- 1856US2025379142A1Interconnect via structure passing through metal levelsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2025·Application pending·0 cites
- 1955US12475395B2Quantum device integrating a buried metal electrodeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Granted Nov 18, 2025·0 cites·15 claims
- 2055US9240325B2Method for making an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jan 19, 2016·0 cites·15 claims
- 2155US2024222474A1Exchange electrodes for network of quantum dotsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 2255US2025017120A1Quantum device for forming an array of quantum dots and associated manufacturing methodCOMMISSARIAT A L’ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2023·Application pending·0 cites
- 2355US2023170402A1Fabricating of a quantum device with autoalignment of the gates on their respective active zone regionCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 2452US11631609B2Method for manufacturing a microelectronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Apr 18, 2023·0 cites·17 claims
- 2551US2014370668A1Method of making a transitorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Application pending·0 cites
- 2650US11387100B2Method for manufacturing a mixed substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Jul 12, 2022·0 cites·20 claims
- 2747US9978602B2Method of making a transistorCOMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2015·Granted May 22, 2018·0 cites·26 claims
- 2846US2016099326A1Method for making an integrated circuitCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Application pending·0 cites
- 2945US11646196B2Method for germanium enrichment around the channel of a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted May 9, 2023·0 cites·8 claims
- 3043US8980702B2Method of making a transistorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Mar 17, 2015·0 cites·32 claims
- 3143US8822332B2Method for forming gate, source, and drain contacts on a MOS transistorST MICROELECTRONICS SA·Filed 2013·Granted Sep 2, 2014·0 cites·12 claims
- 3241US9831319B2Transistor with MIS connections and fabricating processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Nov 28, 2017·0 cites·14 claims
- 3341US2015091089A1Air-spacer mos transistorST MICROELECTRONICS CROLLES 2·Filed 2014·Application pending·0 cites
- 3440US2019312109A1Field-effect transistors with a composite channelGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →