Inventor · disambiguated record
Herbert Schafer
Also filed as: ROBUSCH GUNTER · SCHAEFER HERBERT · SCHAFER HERBERT
39 granted patents·2 pending applications·595 citations·filing 1978–2011
98Inventor score
Top patents by PatentIndex Score
41 records- 0196US6600200B1MOS transistor, method for fabricating a MOS transistor and method for fabricating two complementary MOS transistorsINFINEON TECHNOLOGIES AG·Filed 2000·Granted Jul 29, 2003·130 cites·4 claims
- 0293US7459365B2Method for fabricating a semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 2, 2008·29 cites·32 claims
- 0389US6215140B1Electrically programmable non-volatile memory cell configurationSIEMENS AG·Filed 1999·Granted Apr 10, 2001·64 cites·29 claims
- 0488US7449389B2Method for fabricating a semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Nov 11, 2008·16 cites·16 claims
- 0579US7719088B2High-frequency bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted May 18, 2010·7 cites·12 claims
- 0679US7420228B2Bipolar transistor comprising carbon-doped semiconductorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 2, 2008·8 cites·2 claims
- 0779US7105415B2Method for the production of a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 12, 2006·8 cites·10 claims
- 0879US4162061ACooling element for a metallurgical furnaceTHYSSEN HUETTE AG·Filed 1978·Granted Jul 24, 1979·18 cites·11 claims
- 0975US7285470B2Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2005·Granted Oct 23, 2007·6 cites·5 claims
- 1075US6159815AMethod of producing a MOS transistorSIEMENS AG·Filed 1996·Granted Dec 12, 2000·39 cites·3 claims
- 1174US6995416B2Memory device for storing electrical charge and method for fabricating the sameINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 7, 2006·18 cites·43 claims
- 1274US6040995AMethod of operating a storage cell arrangementSIEMENS AG·Filed 1997·Granted Mar 21, 2000·35 cites·4 claims
- 1372US8102052B2Process for the simultaneous deposition of crystalline and amorphous layers with dopingSCHAEFER HERBERT·Filed 2011·Granted Jan 24, 2012·2 cites·1 claims
- 1472US6127220AManufacturing method for a capacitor in an integrated storage circuitSIEMENS AG·Filed 1999·Granted Oct 3, 2000·29 cites·10 claims
- 1570US7947552B2Process for the simultaneous deposition of crystalline and amorphous layers with dopingINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 24, 2011·2 cites·19 claims
- 1668US8003475B2Method for fabricating a transistor structureINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 23, 2011·2 cites·10 claims
- 1768US7968972B2High-frequency bipolar transistor and method for the production thereofINFINEON TECHNOLOGIES AG·Filed 2010·Granted Jun 28, 2011·2 cites·8 claims
- 1866US6909141B2Method for producing a vertical semiconductor transistor component and vertical semiconductor transistor componentINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 21, 2005·13 cites·16 claims
- 1966US6635545B2Method for fabricating a bipolar transistor and method for fabricating an integrated circuit configuration having such a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 21, 2003·13 cites·10 claims
- 2064US5866452AProcess for producing a silicon capacitorSIEMENS AG·Filed 1995·Granted Feb 2, 1999·23 cites·11 claims
- 2162US7371650B2Method for producing a transistor structureINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 13, 2008·7 cites·7 claims
- 2262US4150818ACooling element for a metallurgical furnaceTHYSSEN HUETTE AG·Filed 1978·Granted Apr 24, 1979·10 cites·14 claims
- 2360US6204119B1Manufacturing method for a capacitor in an integrated memory circuitSIEMENS AG·Filed 1999·Granted Mar 20, 2001·19 cites·10 claims
- 2459US6197666B1Method for the fabrication of a doped silicon layerSIEMENS AG·Filed 1999·Granted Mar 6, 2001·21 cites·12 claims
- 2556US7612430B2Silicon bipolar transistor, circuit arrangement and method for producing a silicon bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 3, 2009·7 cites·14 claims
- 2656US6117790AMethod for fabricating a capacitor for a semiconductor memory configurationSIEMENS AG·Filed 1999·Granted Sep 12, 2000·16 cites·13 claims
- 2752US6140177AProcess of forming a semiconductor capacitor including forming a hemispherical grain statistical mask with silicon and germaniumSIEMENS AG·Filed 1997·Granted Oct 31, 2000·13 cites·5 claims
- 2851US6867105B2Bipolar transistor and method of fabricating a bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 15, 2005·4 cites·10 claims
- 2951US4218212ARefractory front wall for industrial furnaceTHYSSEN HUETTE AG·Filed 1978·Granted Aug 19, 1980·7 cites·8 claims
- 3043US7135757B2Bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Nov 14, 2006·1 cites·12 claims
- 3142US6133126AMethod for fabricating a dopant regionSIEMENS AG·Filed 1999·Granted Oct 17, 2000·9 cites·8 claims
- 3241US8178966B2Integrated coolant circuit arrangement, operating method and production methodLEHMANN VOLKER·Filed 2010·Granted May 15, 2012·0 cites·6 claims
- 3340US2012023478A1Method of replacement for a controller in an onboard power supply system in a vehicleSCHAEFER HERBERT·Filed 2011·Application pending·0 cites
- 3439US4491280ARoller mill constructionPFEIFFER AG GEB·Filed 1983·Granted Jan 1, 1985·7 cites·6 claims
- 3538US6552385B2DRAM memory capacitor having three-layer dielectric, and method for its productionINFINEON TECHNOLOGIES AG·Filed 2001·Granted Apr 22, 2003·0 cites·6 claims
- 3635US6548846B2Storage capacitor for a DRAMINFINEON TECHNOLOGIES AG·Filed 2000·Granted Apr 15, 2003·0 cites·6 claims
- 3734US4399963AElastic tail skid for gliders and light air planesSCHAEFER HERBERT·Filed 1982·Granted Aug 23, 1983·8 cites·18 claims
- 3834US2001020730A1Integrated circuit configuration, method for producing it, and wafer including integrated circuit configurationsFiled 2001·Application pending·0 cites
- 3933US7256472B2Bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 14, 2007·0 cites·11 claims
- 4031US6194765B1Integrated electrical circuit having at least one memory cell and method for fabricating itSIEMENS AG·Filed 1999·Granted Feb 27, 2001·2 cites·5 claims
- 4120US4951853ARefractory plate assembly for a sliding closure unitDIDIER WERKE AG·Filed 1989·Granted Aug 28, 1990·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →