Inventor · disambiguated record
Hiromasa Fujimoto
Also filed as: FUJIMOTO HIROMASA
23 granted patents·7 pending applications·197 citations·filing 1992–2016
95Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD17TOSHIBA KK3FUJIMOTO HIROMASA2PANASONIC IP MAN CO LTD2ITOU SATORU1
Top patents by PatentIndex Score
30 records- 0187US6538275B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Mar 25, 2003·39 cites·8 claims
- 0277US6770517B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Aug 3, 2004·20 cites·3 claims
- 0377US6337500B1Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Jan 8, 2002·35 cites·5 claims
- 0475US6545312B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Apr 8, 2003·16 cites·7 claims
- 0569US7064375B2Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereofTOSHIBA KK·Filed 2003·Granted Jun 20, 2006·13 cites·30 claims
- 0667US6642572B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Nov 4, 2003·10 cites·7 claims
- 0766US9406722B2Solid-state imaging device and method of manufacturing the samePANASONIC IP MAN CO LTD·Filed 2014·Granted Aug 2, 2016·1 cites·18 claims
- 0865US8178929B2Semiconductor device and method for fabricating the sameNAKANISHI KENTARO·Filed 2011·Granted May 15, 2012·2 cites·20 claims
- 0964US5227323AMethod of manufacturing capacitor elements in an integrated circuit having a compound semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Jul 13, 1993·25 cites·6 claims
- 1063US8779524B2Semiconductor deviceMORIYAMA YOSHIYA·Filed 2012·Granted Jul 15, 2014·3 cites·13 claims
- 1159US8035150B2Nonvolatile semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2006·Granted Oct 11, 2011·1 cites·21 claims
- 1254US8604554B2Semiconductor deviceITOU SATORU·Filed 2012·Granted Dec 10, 2013·1 cites·15 claims
- 1353US9647038B2Solid-state imaging device and method of manufacturing the samePANASONIC IP MAN CO LTD·Filed 2016·Granted May 9, 2017·0 cites·14 claims
- 1451US7932141B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Apr 26, 2011·0 cites·16 claims
- 1547US6828621B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Dec 7, 2004·2 cites·8 claims
- 1646US6982456B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC CO LTD·Filed 2004·Granted Jan 3, 2006·2 cites·7 claims
- 1746US6784040B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 31, 2004·2 cites·59 claims
- 1845US6830973B2Nonvolatile semiconductor memory device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Dec 14, 2004·2 cites·4 claims
- 1945US2006170064A1Semiconductor memory device having a gate electrode and a diffusion layer and a manufacturing method thereofTOSHIBA KK·Filed 2006·Application pending·0 cites
- 2043US5824575ASemiconductor device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Oct 20, 1998·9 cites·11 claims
- 2143US2009065807A1Semiconductor device and fabrication method for the sameFUJIMOTO HIROMASA·Filed 2008·Application pending·0 cites
- 2242US6770931B2Nonvolatile semiconductor memory device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Aug 3, 2004·1 cites·8 claims
- 2342US5585655AField-effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted Dec 17, 1996·8 cites·5 claims
- 2439US2012256265A1Semiconductor device and manufacturing method thereofFUJIMOTO HIROMASA·Filed 2012·Application pending·0 cites
- 2539US2007284670A1Semiconductor device and fabrication method thereforYAMAMOTO KAZUHIKO·Filed 2007·Application pending·0 cites
- 2638US2005051837A1Nonvolatile semiconductor memory device and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Application pending·0 cites
- 2738US2005161745A1CMOS device, method for fabricating the same and method for generating mask dataMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Application pending·0 cites
- 2837US5514883AField effect transistorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1995·Granted May 7, 1996·5 cites·15 claims
- 2933US6803623B2Nonvolatile semiconductor memory device which can operate at high speed with low voltage, and manufacturing method thereMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Oct 12, 2004·0 cites·18 claims
- 3033US2002145162A1Non-volatile semiconductor storage device and method for producing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →