Inventor · disambiguated record
Hideo Fujisawa
Also filed as: FUJISAWA HIDEO
30 granted patents·3 pending applications·65 citations·filing 1985–2023
95Inventor score
Top patents by PatentIndex Score
33 records- 0191US11038024B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 15, 2021·4 cites·19 claims
- 0291US10475887B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Nov 12, 2019·5 cites·15 claims
- 0390US10301743B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2017·Granted May 28, 2019·5 cites·15 claims
- 0489US11031475B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2019·Granted Jun 8, 2021·3 cites·18 claims
- 0589US10655244B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2018·Granted May 19, 2020·2 cites·19 claims
- 0689US10066319B2GaN substrate, method for producing GaN substrate, method for producing GaN crystal, and method for manufacturing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2016·Granted Sep 4, 2018·6 cites·13 claims
- 0788US9518337B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2015·Granted Dec 13, 2016·4 cites·20 claims
- 0887US11664428B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2021·Granted May 30, 2023·1 cites·13 claims
- 0984US10903072B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Jan 26, 2021·1 cites·18 claims
- 1083US12107129B2Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor deviceMITSUBISHI CHEM CORP·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims
- 1183US9096945B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2012·Granted Aug 4, 2015·4 cites·10 claims
- 1280US2024105449A1CONDUCTIVE C-PLANE GaN SUBSTRATEMITSUBISHI CHEM CORP·Filed 2023·Application pending·0 cites
- 1378US10796904B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Oct 6, 2020·1 cites·18 claims
- 1477US10995421B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2019·Granted May 4, 2021·0 cites·9 claims
- 1574US10720326B2Method for growing GaN crystal and C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2019·Granted Jul 21, 2020·1 cites·21 claims
- 1674US2022033992A1Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2021·Application pending·0 cites
- 1773US11810782B2Conductive C-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Nov 7, 2023·0 cites·25 claims
- 1872US10734485B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2017·Granted Aug 4, 2020·1 cites·17 claims
- 1972US10309038B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2017·Granted Jun 4, 2019·0 cites·13 claims
- 2071US11591715B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2021·Granted Feb 28, 2023·0 cites·13 claims
- 2168US11670687B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2020·Granted Jun 6, 2023·0 cites·15 claims
- 2268US9673046B2Gallium nitride substrate and manufacturing method of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2015·Granted Jun 6, 2017·1 cites·18 claims
- 2366US11404268B2Method for growing GaN crystal and c-plane GaN substrateMITSUBISHI CHEM CORP·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 2466US11162190B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2019·Granted Nov 2, 2021·0 cites·19 claims
- 2566US9890474B2Crystal of nitride of group-13 metal on periodic table, and method for producing the sameMITSUBISHI CHEM CORP·Filed 2015·Granted Feb 13, 2018·0 cites·19 claims
- 2662USD289801SLighterFUJISAWA COMPANY LTD·Filed 1985·Granted May 12, 1987·10 cites·1 claims
- 2761US11001940B2GaN single crystal and method for manufacturing GaN single crystalMITSUBISHI CHEM CORP·Filed 2018·Granted May 11, 2021·0 cites·22 claims
- 2860USD368046SWatch bandZIPPO MFG CO·Filed 1994·Granted Mar 19, 1996·9 cites·1 claims
- 2958US10526726B2Method for producing nitride crystal and nitride crystalMITSUBISHI CHEM CORP·Filed 2016·Granted Jan 7, 2020·0 cites·22 claims
- 3058US9163324B2Method for producing nitride crystalFUJISAWA HIDEO·Filed 2012·Granted Oct 20, 2015·0 cites·18 claims
- 3155USD296245SLighterFUJISAWA COMPANY LTD·Filed 1986·Granted Jun 14, 1988·7 cites·1 claims
- 3253US8574532B2Method for producing semiconductor crystal, apparatus for crystal production and group 13 element nitride semiconductor crystalFUJISAWA HIDEO·Filed 2011·Granted Nov 5, 2013·0 cites·11 claims
- 3353US2015354086A1Method for producing nitride crystalFUJISAWA HIDEO·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →