Inventor · disambiguated record
Hisashi Furuya
Also filed as: FURUYA HISASHI
22 granted patents·2 pending applications·437 citations·filing 1989–2017
96Inventor score
Files withMITSUBISHI MATERIAL SILICON12MITSUBISHI MATERIALS CORP2STANLEY ELECTRIC CO LTD2HARADA KAZUHIRO1MISTSUBISHI MATERIAL CORP1
Top patents by PatentIndex Score
24 records- 0193US4981549AMethod and apparatus for growing silicon crystalsMITSUBISHI METAL CORP·Filed 1989·Granted Jan 1, 1991·98 cites·1 claims
- 0292US8529695B2Method for manufacturing a silicon waferHARADA KAZUHIRO·Filed 2011·Granted Sep 10, 2013·6 cites·1 claims
- 0387US6663708B1Silicon wafer, and manufacturing method and heat treatment method of the sameMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Dec 16, 2003·42 cites·1 claims
- 0485US5674756AMethod for intrinsic-gettering silicon waferMITSUBISHI MATERIALS CORP·Filed 1995·Granted Oct 7, 1997·105 cites·7 claims
- 0583US10076994B2Vehicle lampSTANLEY ELECTRIC CO LTD·Filed 2017·Granted Sep 18, 2018·4 cites·7 claims
- 0678US5871581ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Feb 16, 1999·34 cites·5 claims
- 0770US6428619B1Silicon wafer, and heat treatment method of the same and the heat-treated silicon waferMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Aug 6, 2002·16 cites·11 claims
- 0867US5891245ASingle crystal pulling method and apparatus for its implementationMITSUBISHI MATERIALS SILLCON C·Filed 1997·Granted Apr 6, 1999·24 cites·12 claims
- 0965US6682597B2Silicon wafer, and heat treatment method of the same and the heat-treated silicon waferMITSUBISHI MATERIAL SILICON·Filed 2002·Granted Jan 27, 2004·7 cites·2 claims
- 1065US6379460B1Thermal shield device and crystal-pulling apparatus using the sameMITSUBISHI MATERIAL SILICON·Filed 2000·Granted Apr 30, 2002·12 cites·30 claims
- 1163US5858087ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1996·Granted Jan 12, 1999·17 cites·18 claims
- 1260US5474022ADouble crucible for growing a silicon single crystalMITSUBISHI MATERIALS CORP·Filed 1995·Granted Dec 12, 1995·16 cites·10 claims
- 1356US9347636B2Vehicle lighting unitSTANLEY ELECTRIC CO LTD·Filed 2014·Granted May 24, 2016·1 cites·2 claims
- 1450US5779792ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Jul 14, 1998·10 cites·6 claims
- 1548US5840115ASingle crystal growth methodMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Nov 24, 1998·8 cites·8 claims
- 1648US2011036860A1Single-crystal growth apparatus and raw-material supply methodSUMCO CORP·Filed 2009·Application pending·0 cites
- 1747US7294203B2Heat shielding member of silicon single crystal pulling systemSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Nov 13, 2007·1 cites·17 claims
- 1845US5714267ASeed crystal of silicon single crystalMISTSUBISHI MATERIAL CORP·Filed 1996·Granted Feb 3, 1998·13 cites·25 claims
- 1941US5797638AHoist apparatus for annular memberMITSUBISHI MATERIALS SILICON·Filed 1997·Granted Aug 25, 1998·10 cites·10 claims
- 2039US2004025983A1Method of manufacturing siliconFiled 2003·Application pending·0 cites
- 2137US5895527ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Apr 20, 1999·6 cites·22 claims
- 2236US5843228AApparatus for preventing heater electrode meltdown in single crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Dec 1, 1998·4 cites·4 claims
- 2334US5897706AMethods for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed thereinMITSUBISHI MATERIAL SILICON·Filed 1997·Granted Apr 27, 1999·3 cites·5 claims
- 2429US5873938ASingle crystal pulling apparatusMITSUBISHI MATERIAL SILICON·Filed 1996·Granted Feb 23, 1999·0 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →