Inventor · disambiguated record
Hiromi Itoh
Also filed as: ITOH HIROMI
19 granted patents·4 pending applications·1,576 citations·filing 1987–2021
96Inventor score
Top patents by PatentIndex Score
23 records- 0198US5174881AApparatus for forming a thin film on surface of semiconductor substrateMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 29, 1992·448 cites·4 claims
- 0297US5572052AElectronic device using zirconate titanate and barium titanate ferroelectrics in insulating layerMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Nov 5, 1996·221 cites·3 claims
- 0397US5407867AMethod of forming a thin film on surface of semiconductor substrateMITSUBISHKI DENKI KABUSHIKI KA·Filed 1992·Granted Apr 18, 1995·380 cites·10 claims
- 0494US7510984B2Method of forming silicon nitride film and method of manufacturing semiconductor deviceULVAC INC·Filed 2005·Granted Mar 31, 2009·86 cites·8 claims
- 0592US5382817ASemiconductor device having a ferroelectric capacitor with a planarized lower electrodeMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 17, 1995·98 cites·8 claims
- 0686US5519237ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 21, 1996·43 cites·10 claims
- 0783US11645136B2Capturing referenced information in a report to resolve a computer problemIBM·Filed 2021·Granted May 9, 2023·2 cites·17 claims
- 0881US5567964ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Oct 22, 1996·59 cites·9 claims
- 0980US6746876B2Capacitor manufacturing method having dielectric formed before electrodeRENESAS TECH CORP·Filed 2002·Granted Jun 8, 2004·27 cites·14 claims
- 1080US5470799AMethod for pretreating semiconductor substrate by photochemically removing native oxideMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 28, 1995·54 cites·10 claims
- 1169US5429991AMethod of forming thin film for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jul 4, 1995·39 cites·14 claims
- 1269US4883020AApparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductorFUJITSU LTD·Filed 1989·Granted Nov 28, 1989·21 cites·23 claims
- 1363US5693553ASemiconductor device and manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 2, 1997·25 cites·3 claims
- 1459US5753527AMethod of manufacturing a semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 19, 1998·13 cites·5 claims
- 1555US2009277386A1Catalytic chemical vapor deposition apparatusULVAC INC·Filed 2007·Application pending·0 cites
- 1654US5240505AMethod of an apparatus for forming thin film for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Aug 31, 1993·21 cites·16 claims
- 1754US2012145184A1Self-cleaning catalytic chemical vapor deposition apparatus and cleaning method thereofKITAZOE MAKIKO·Filed 2012·Application pending·0 cites
- 1849US5070815AMOCVD device for growing a semiconductor layer by the metal-organic chemical vapor deposition processFUJITSU LTD·Filed 1991·Granted Dec 10, 1991·14 cites·7 claims
- 1948US5972748ASemiconductor memory device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Oct 26, 1999·7 cites·5 claims
- 2048US2007209677A1Self-Cleaning Catalytic Chemical Vapor Deposition Apparatus And Cleaning Method ThereofKITAZOE MAKIKO·Filed 2005·Application pending·0 cites
- 2143US4839196APhotochemical film-forming methodMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Jun 13, 1989·9 cites·2 claims
- 2243US4732793AMethod and apparatus for laser-induced CVDMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Mar 22, 1988·9 cites·8 claims
- 2336US2002125524A1Semiconductor device and method of manufacturing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →