Inventor · disambiguated record
Hiroshi Itokawa
Also filed as: ITOKAWA HIROSHI
31 granted patents·16 pending applications·73 citations·filing 2002–2025
95Inventor score
Top patents by PatentIndex Score
47 records- 0189US8729607B2Needle-shaped profile finFET deviceITOKAWA HIROSHI·Filed 2012·Granted May 20, 2014·17 cites·18 claims
- 0285US9246005B2Stressed channel bulk fin field effect transistorIBM·Filed 2014·Granted Jan 26, 2016·5 cites·13 claims
- 0381US10566280B2Semiconductor device and method of manufacturing the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Feb 18, 2020·3 cites·20 claims
- 0473US7247867B2Ion implanter and method of manufacturing semiconductor deviceTOSHIBA KK·Filed 2005·Granted Jul 24, 2007·3 cites·15 claims
- 0566US10636807B2Semiconductor memory device and method of fabricating the sameTOSHIBA MEMORY CORP·Filed 2018·Granted Apr 28, 2020·1 cites·14 claims
- 0666US8012858B2Method of fabricating semiconductor deviceTOSHIBA KK·Filed 2009·Granted Sep 6, 2011·2 cites·20 claims
- 0764US7531408B2Method of manufacturing a semiconductor device containing a PbxSr(1-x)[Zr,Ti]xRu(1-x)O3 film in a capacitorTOSHIBA KK·Filed 2007·Granted May 12, 2009·1 cites·5 claims
- 0862US2025301737A1Method for manufacturing semiconductor memory device and semiconductor memory deviceKIOXIA CORP·Filed 2025·Application pending·0 cites
- 0961US7122851B2Semiconductor device with perovskite capacitorTOSHIBA KK·Filed 2004·Granted Oct 17, 2006·9 cites·14 claims
- 1059US12302565B2Semiconductor storage deviceKIOXIA CORP·Filed 2022·Granted May 13, 2025·0 cites·17 claims
- 1159US7456456B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Nov 25, 2008·1 cites·4 claims
- 1259US6924519B2Semiconductor device with perovskite capacitorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 2, 2005·8 cites·22 claims
- 1358US7986013B2Semiconductor device having SiGe semiconductor regionsTOSHIBA KK·Filed 2008·Granted Jul 26, 2011·1 cites·5 claims
- 1456US8043945B2Method of fabricating semiconductor deviceTOSHIBA KK·Filed 2009·Granted Oct 25, 2011·0 cites·14 claims
- 1556US7031138B2Ferroelectric capacitor and process for its manufactureTOSHIBA KK·Filed 2002·Granted Apr 18, 2006·7 cites·10 claims
- 1655US7049650B1Semiconductor deviceTOSHIBA KK·Filed 2004·Granted May 23, 2006·6 cites·11 claims
- 1753US11581329B2Semiconductor memory deviceKIOXIA CORP·Filed 2020·Granted Feb 14, 2023·0 cites·19 claims
- 1852US7105400B2Manufacturing method of semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 12, 2006·4 cites·7 claims
- 1951US9263319B2Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2014·Granted Feb 16, 2016·0 cites·11 claims
- 2050US9484262B2Stressed channel bulk fin field effect transistorIBM·Filed 2015·Granted Nov 1, 2016·0 cites·13 claims
- 2150US7259094B2Apparatus and method for heat treating thin filmTOSHIBA KK·Filed 2005·Granted Aug 21, 2007·0 cites·15 claims
- 2248US8551871B2Method of fabricating semiconductor deviceMIZUSHIMA ICHIRO·Filed 2011·Granted Oct 8, 2013·0 cites·12 claims
- 2348US7233040B2Semiconductor device contains a PbxSr(1−x)[Zr, Ti]xRu(1−x)O3 film in a capacitorTOSHIBA KK·Filed 2004·Granted Jun 19, 2007·1 cites·25 claims
- 2447US9018061B2Semiconductor memory device and method for manufacturing the sameTOSHIBA KK·Filed 2014·Granted Apr 28, 2015·0 cites·7 claims
- 2545US9972635B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2016·Granted May 15, 2018·0 cites·20 claims
- 2645US7042037B1Semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2004·Granted May 9, 2006·2 cites·11 claims
- 2745US6933549B2Barrier materialTOSHIBA KK·Filed 2003·Granted Aug 23, 2005·2 cites·25 claims
- 2845US2008160642A1Semiconductor deviceITOKAWA HIROSHI·Filed 2008·Application pending·0 cites
- 2945US2010029053A1Method of manufacturing semiconductor deviceITOKAWA HIROSHI·Filed 2009·Application pending·0 cites
- 3044US2009108412A1Semiconductor substrate and method for manufacturing a semiconductor substrateITOKAWA HIROSHI·Filed 2008·Application pending·0 cites
- 3143US7557040B2Method of manufacture of semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jul 7, 2009·0 cites·15 claims
- 3243US2010006907A1Semiconductor device and method of manufacturing the sameITOKAWA HIROSHI·Filed 2009·Application pending·0 cites
- 3342US11183507B2Semiconductor memory device and method for manufacturing sameTOSHIBA MEMORY CORP·Filed 2017·Granted Nov 23, 2021·0 cites·16 claims
- 3441US7402444B2Method and apparatus for manufacturing a semiconductor deviceTOSHIBA KK·Filed 2006·Granted Jul 22, 2008·0 cites·20 claims
- 3541US2010084685A1Semiconductor device and manufacturing method thereofITOKAWA HIROSHI·Filed 2009·Application pending·0 cites
- 3641US2004155278A1Semiconductor device, apparatus and method for manufacturing the sameFiled 2003·Application pending·0 cites
- 3740US2006214210A1Semiconductor deviceITOKAWA HIROSHI·Filed 2005·Application pending·0 cites
- 3839US9613974B2Semiconductor device and method for manufacturing the sameTOSHIBA KK·Filed 2015·Granted Apr 4, 2017·0 cites·6 claims
- 3939US2005274999A1Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 4039US2013017674A1Cryogenic silicon ion-implantation and recrystallization annealingTOSHIBA AMERICA ELECTRONIC·Filed 2011·Application pending·0 cites
- 4138US11257832B2Semiconductor memory device and method for manufacturing sameKIOXIA CORP·Filed 2017·Granted Feb 22, 2022·0 cites·11 claims
- 4238US2019018440A1Rotational operation deviceTOKAI RIKA CO LTD·Filed 2017·Application pending·0 cites
- 4338US2005070043A1Semiconductor device and method for manufacturing the sameFiled 2003·Application pending·0 cites
- 4434US2011014781A1Method of fabricating semiconductor deviceITOKAWA HIROSHI·Filed 2010·Application pending·0 cites
- 4534US2016268388A1Non-volatile memory device and method for manufacturing sameTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4633US2015255554A1Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2015·Application pending·0 cites
- 4731US2010327329A1Semiconductor device and method of fabricating the sameITOKAWA HIROSHI·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →