Semiconductor device

Abstract

A semiconductor device according to an aspect of the invention comprises a semiconductor substrate, a conductive plug which is connected to an active region of a transistor formed on the semiconductor substrate, a metal silicide film which covers a bottom surface portion and side surface portion of the conductive plug, and an electrode structure which is formed on the conductive plug.

1 . A method of manufacturing a semiconductor device, comprising:
 forming a transistor which has source and drain regions;   forming an insulating region which covers the transistor and which has a hole reaching one of the source and drain regions;   forming a silicon film on bottom and side surfaces of the hole;   forming a metal film on the silicon film;   forming a metal silicide film on the bottom and side surfaces of the hole by causing the silicon film and the metal film to react with each other;   forming a conductive plug in the hole with the metal silicide film formed on the bottom and side surfaces of the hole; and   forming an electrode structure on a top surface of the conductive plug.   
   
   
       2 . The method according to  claim 1 , wherein
 forming the silicon film on the bottom and side surfaces of the hole includes forming the silicon film on a top surface of the insulating region,   forming the metal silicide film on the bottom and side surfaces of the hole includes forming the metal silicide film on the top surface of the insulating region, and   forming the electrode structure on the top surface of the conductive plug includes forming the electrode structure on the top surface of the insulating region with the metal silicide film interposed between the top surface of the insulating region and a bottom surface of the electrode structure.   
   
   
       3 . The method according to  claim 1 , further comprising forming a ferroelectric film on the electrode structure. 
   
   
       4 . The method according to  claim 3 , wherein the ferroelectric film is made of one of PZT and SBT. 
   
   
       5 . The method according to  claim 1 , wherein the conductive plug is essentially made of tungsten. 
   
   
       6 . The method according to  claim 1 , wherein the conductive plug is essentially made of silicon. 
   
   
       7 . The method according to  claim 1 , wherein the metal silicide film is essentially made of one of Ti silicide and Co silicide. 
   
   
       8 . The method according to  claim 1 , wherein the conductive plug is formed on a TiN film on the metal silicide film. 
   
   
       9 . A method of manufacturing a semiconductor device, comprising:
 forming a transistor which has source and drain regions;   forming an insulating region which covers the transistor and which has a hole reaching one of the source and drain regions;   forming a metal film on bottom and side surfaces of the hole;   forming a silicon film on the metal film;   forming a metal silicide film on the bottom and side surfaces of the hole by causing the silicon film and the metal film to react with each other, thereby forming a conductive plug in the hole with the metal silicide film formed on the bottom and side surfaces of the hole, the conductive plug being formed of the silicon film remaining in the hole without reacting with the metal film; and   forming an electrode structure on a top surface of the conductive plug.   
   
   
       10 . The method according to  claim 9 , wherein
 forming the metal film on the bottom and side surfaces of the hole includes forming the metal film on a top surface of the insulating region,   forming the metal silicide film on the bottom and side surfaces of the hole includes forming the metal silicide film on the top surface of the insulating region, and   forming the electrode structure on the top surface of the conductive plug includes forming the electrode structure on the top surface of the insulating region with the metal silicide film interposed between the top surface of the insulating region and a bottom surface of the electrode structure.   
   
   
       11 . The method according to  claim 9 , further comprising forming a ferroelectric film on the electrode structure. 
   
   
       12 . The method according to  claim 11 , wherein the ferroelectric film is made of one of PZT and SBT. 
   
   
       13 . The method according to  claim 9 , wherein the metal silicide film is essentially made of one of Ti silicide and Co silicide.