Inventor · disambiguated record
Hidenori Kamei
Also filed as: KAMEI HIDENORI
27 granted patents·7 pending applications·591 citations·filing 1990–2016
97Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD12PANASONIC CORP11HORI ATSUHIRO3KAMEI HIDENORI2KINOSHITA YOSHITAKA2
Top patents by PatentIndex Score
34 records- 0198US7422504B2Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Sep 9, 2008·71 cites·16 claims
- 0298US7023019B2Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Apr 4, 2006·212 cites·19 claims
- 0393US7592639B2Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor devicePANASONIC CORP·Filed 2006·Granted Sep 22, 2009·19 cites·22 claims
- 0492US7629620B2Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor devicePANASONIC CORP·Filed 2006·Granted Dec 8, 2009·19 cites·14 claims
- 0591US7951625B2Semiconductor light emitting element and method for manufacturing semiconductor light emitting devicePANASONIC CORP·Filed 2008·Granted May 31, 2011·22 cites·6 claims
- 0681US8552444B2Semiconductor light-emitting device and manufacturing method of the sameIDE YOSHIYUKI·Filed 2008·Granted Oct 8, 2013·15 cites·7 claims
- 0781US6090211AApparatus and method for forming semiconductor thin layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Jul 18, 2000·45 cites·13 claims
- 0880US7601985B2Semiconductor light-emitting devicePANASONIC CORP·Filed 2006·Granted Oct 13, 2009·7 cites·7 claims
- 0976US7772769B2Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor devicePANASONIC CORP·Filed 2007·Granted Aug 10, 2010·3 cites·16 claims
- 1076US6365923B1Nitride semiconductor light-emitting element and process for production thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Apr 2, 2002·27 cites·15 claims
- 1171US8399272B2Method of manufacturing semiconductor light emitting elementYAMAE KAZUYUKI·Filed 2009·Granted Mar 19, 2013·4 cites·20 claims
- 1271US7056755B1P-type nitride semiconductor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Jun 6, 2006·15 cites·16 claims
- 1369US8076679B2Nitride-based semiconductor light-emitting diode and illuminating deviceKINOSHITA YOSHITAKA·Filed 2005·Granted Dec 13, 2011·5 cites·7 claims
- 1463US8178889B2Semiconductor light emitting element having a single defect concentrated region and a light emitting which is not formed on the single defect concentrated regionKINOSHITA YOSHITAKA·Filed 2007·Granted May 15, 2012·2 cites·10 claims
- 1561US6051847AGallium nitride compound-based semiconductor light emitting device and process for producing gallium nitride compound-based semiconductor thin filmMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Apr 18, 2000·36 cites·7 claims
- 1660USRE47453ELuminescent layer and light-emitting semiconductor devicePANASONIC CORP·Filed 2016·Granted Jun 25, 2019·0 cites·26 claims
- 1760US6841800B2Light-emitting device comprising a gallium-nitride-group compound-semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jan 11, 2005·8 cites·2 claims
- 1858US7915714B2Semiconductor light emitting element and waferPANASONIC CORP·Filed 2007·Granted Mar 29, 2011·2 cites·4 claims
- 1956US6445127B1Light-emitting device comprising gallium-nitride-group compound-semiconductor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Sep 3, 2002·21 cites·10 claims
- 2056US6307219B1Light-emitting device comprising gallium-nitride-group compound semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1999·Granted Oct 23, 2001·21 cites·8 claims
- 2155US2009321745A1Semiconductor light-emitting devicePANASONIC CORP·Filed 2009·Application pending·0 cites
- 2254US5093278AMethod of manufacturing a semiconductor laserSUMITOMO ELECTRIC INDUSTRIES·Filed 1990·Granted Mar 3, 1992·16 cites·8 claims
- 2352US2011089466A1Semiconductor light emitting devicePANASONIC CORP·Filed 2010·Application pending·0 cites
- 2451US7863623B2Semiconductor light emitting devicePANASONIC CORP·Filed 2006·Granted Jan 4, 2011·0 cites·6 claims
- 2547US6497944B1Light-emitting device comprising a gallium-nitride-group compound-semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1998·Granted Dec 24, 2002·14 cites·2 claims
- 2647US2010252855A1Semiconductor light-emitting deviceKAMEI HIDENORI·Filed 2008·Application pending·0 cites
- 2746US7002184B2Light-emitting device comprising a gallum-nitride-group compound-semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Feb 21, 2006·1 cites·4 claims
- 2846US2010237382A1Semiconductor light emitting element, semiconductor light emitting device using the element, and method for manufacturing the deviceKAMEI HIDENORI·Filed 2008·Application pending·0 cites
- 2945US2006183260A1P-type nitride semiconductor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Application pending·0 cites
- 3042US2010187565A1Semiconductor light emitting element and waferPANASONIC CORP·Filed 2010·Application pending·0 cites
- 3139US5436924ASemiconductor laser deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Jul 25, 1995·6 cites·5 claims
- 3238US8309975B2Semiconductor light emitting element and semiconductor light emitting device using the sameHORI ATSUHIRO·Filed 2008·Granted Nov 13, 2012·0 cites·7 claims
- 3336US2011037092A1Light-emitting elementHORI ATSUHIRO·Filed 2009·Application pending·0 cites
- 3434US8507935B2Light emitting element and light emitting deviceHORI ATSUHIRO·Filed 2010·Granted Aug 13, 2013·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →