P-type nitride semiconductor and method of manufacturing the same

Abstract

A method for manufacturing p-type nitride semiconductor comprising a semiconductor layer forming process where a low resistivity p-type nitride semiconductor layer is formed on a substrate by introducing the sources of p-type dopant, nitrogen and Group III sources on a substrate held at a temperature of 600° C. or higher and a cooling process for cooling the substrate which is bearing the p-type nitride semiconductor layer. The manufacturing method features in that the hole carrier concentration of the p-type nitride semiconductor layer decreases during the cooling process. A superior quality p-type nitride semiconductor is made available, without needing any annealing treatment after growth, by properly specifying the concentration of atmosphere gas and the cooling time.

1 - 10 . (canceled)  
   
   
       11 . A p-type nitride semiconductor grown on a substrate at a temperature of 600° C. or higher, wherein the hole carrier concentration immediately after the cooling equals to approximately 5%-100% of the hole carrier concentration at said growth temperature.  
   
   
       12 . A p-type nitride semiconductor grown on a substrate at a temperature of 600° C. or higher, the upper surface of said p-type nitride semiconductor being exposed, wherein the hydrogen concentration at the vicinity of upper surface of said p-type nitride semiconductor equals to 1-10 times that in the inside of said p-type nitride semiconductor