Inventor · disambiguated record
Himani Suhag Kamineni
Also filed as: KAMINENI HIMANI · KAMINENI HIMANI S · Kamineni Himani Suhag
4 granted patents·5 citations·filing 2013–2021
63Inventor score
Top patents by PatentIndex Score
4 records- 0180US9917009B2Methods of forming a through-substrate-via (TSV) and a metallization layer after formation of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 13, 2018·3 cites·20 claims
- 0268US12449620B2Structure and method to remove semiconductor chip material for optical signal access to a photonic chipPSIQUANTUM CORP·Filed 2021·Granted Oct 21, 2025·0 cites·28 claims
- 0360US9123787B2Through-silicon via unit cell with keep out zones and center point aligned probe pad, and method of formingGLOBALFOUNDRIES INC·Filed 2013·Granted Sep 1, 2015·2 cites·11 claims
- 0450US10446443B2Integrated circuit product having a through-substrate-via (TSV) and a metallization layer that are formed after formation of a semiconductor deviceGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →