Inventor · disambiguated record
Hiroshi Kaneta
Also filed as: KANETA HIROSHI
13 granted patents·6 pending applications·182 citations·filing 1984–2014
92Inventor score
Top patents by PatentIndex Score
19 records- 0192US4480682AApparatus for freezing fertilized ova, spermatozoa or the likeHOXAN KK·Filed 1984·Granted Nov 6, 1984·40 cites·7 claims
- 0287US7700227B2ModuleNEC CORP·Filed 2008·Granted Apr 20, 2010·7 cites·28 claims
- 0382US7087344B2Battery moduleNEC CORP·Filed 2002·Granted Aug 8, 2006·24 cites·18 claims
- 0477US8017260B2Secondary battery having third terminal other than positive and negative electrode terminals and battery comprising itNEC CORP·Filed 2003·Granted Sep 13, 2011·16 cites·12 claims
- 0572US8215175B2Quantitative evaluation device of atomic vacancies existing in silicon wafer, method for the device, silicon wafer manufacturing method, and thin-film oscillatorGOTO TERUTAKA·Filed 2008·Granted Jul 10, 2012·7 cites·11 claims
- 0668US7029789B2Flat-type cell and combined battery utilizing the sameNEC CORP·Filed 2003·Granted Apr 18, 2006·8 cites·11 claims
- 0765US8037761B2Quantitative evaluation device and method of atomic vacancy existing in silicon waferUNIV NIIGATA·Filed 2007·Granted Oct 18, 2011·2 cites·19 claims
- 0863US5286658AProcess for producing semiconductor deviceFUJITSU LTD·Filed 1992·Granted Feb 15, 1994·37 cites·8 claims
- 0956US4803884AMethod for measuring lattice defects in semiconductorFUJITSU LTD·Filed 1987·Granted Feb 14, 1989·17 cites·11 claims
- 1055US6528382B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2001·Granted Mar 4, 2003·9 cites·15 claims
- 1154US2011256444A1Secondary battery having third terminal in addition to positive and negative electrode terminals and storage battery using the sameNEC CORP·Filed 2011·Application pending·0 cites
- 1247US2005042511A1ModuleFiled 2004·Application pending·0 cites
- 1345US5066599ASilicon crystal oxygen evaluation method using fourier transform infrared spectroscopy (ftir) and semiconductor device fabrication method using the sameFUJITSU LTD·Filed 1990·Granted Nov 19, 1991·15 cites·25 claims
- 1443US2009217866A1METHOD FOR PRODUCING Si SINGLE CRYSTAL INGOT BY CZ METHODSUMCO CORP·Filed 2007·Application pending·0 cites
- 1543US2006188777A1Lithium ion secondary cellKANETA HIROSHI·Filed 2004·Application pending·0 cites
- 1641US7906443B2Controlling oxygen precipitates in silicon wafers using infrared irradiation and heatingFUJITSU LTD·Filed 2006·Granted Mar 15, 2011·0 cites·8 claims
- 1738US2016258908A1Method for evaluating atomic vacancy in surface layer of silicon wafer and apparatus for evaluating the sameUNIV NIIGATA·Filed 2014·Application pending·0 cites
- 1833US2004135208A1Semiconductor substrate and manufacturing method thereofFUJITSU LTD·Filed 2003·Application pending·0 cites
- 1927US8578777B2Method for quantitatively evaluating concentration of atomic vacancies existing in silicon wafer, method for manufacturing silicon wafer, and silicon wafer manufactured by the method for manufacturing silicon waferGOTO TERUTAKA·Filed 2010·Granted Nov 12, 2013·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →