Inventor · disambiguated record
Hitoshi Kuribayashi
Also filed as: KURIBAYASHI HITOSHI
4 granted patents·1 pending application·9 citations·filing 2003–2007
65Inventor score
Top patents by PatentIndex Score
5 records- 0170US7510975B2Method for manufacturing a semiconductor device having trenches defined in the substrate surfaceFUJI ELECTRIC HOLDINGS·Filed 2005·Granted Mar 31, 2009·6 cites·14 claims
- 0243US7410873B2Method of manufacturing a semiconductor deviceFUJI ELECTRIC HOLDINGS·Filed 2003·Granted Aug 12, 2008·2 cites·13 claims
- 0343US7368363B2Method of manufacturing semiconductor device and method of treating semiconductor surfaceFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted May 6, 2008·1 cites·15 claims
- 0440US8080846B2Semiconductor device having improved breakdown voltage and method of manufacturing the sameYOSHIKAWA KOH·Filed 2007·Granted Dec 20, 2011·0 cites·19 claims
- 0532US2005106794A1Method of manufacturing a semiconductor deviceFUJI ELECTRIC HOLDINGS·Filed 2004·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Hitoshi Kuribayashi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →