Method of manufacturing semiconductor device and method of treating semiconductor surface

Abstract

A method of manufacturing a semiconductor device includes the steps of: exposing a semiconductor surface of a substrate; annealing the substrate in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 760 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface; and forming a gate insulator film on the planarized semiconductor surface.

1. A method of manufacturing a semiconductor device, comprising:
 exposing a semiconductor surface of a substrate; 
 annealing the substrate in a hydrogen atmosphere at a pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the semiconductor surface; and 
 forming a gate insulator film on the semiconductor surface, 
 wherein the planarizing reduces a standard deviation of roughness (Rms) to 0.5 μm or less. 
 
     
     
       2. A method of manufacturing a semiconductor device according to  claim 1 , wherein in the step of annealing the substrate, said hydrogen pressure is maintained between 300 Torr and 500 Torr. 
     
     
       3. A method of manufacturing a semiconductor device according to  claim 1 , wherein the pressure of the hydrogen atmosphere comprises a hydrogen partial pressure. 
     
     
       4. A method of manufacturing a semiconductor device, comprising:
 forming a trench in a semiconductor substrate; 
 annealing the semiconductor substrate in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to round corners of the trench and to planarize a sidewall of the trench; and 
 forming a gate insulator film on an inner surface of the trench, 
 wherein the planarizing reduces a standard deviation of roughness (Rms) to 0.5 μm or less. 
 
     
     
       5. A method of manufacturing a semiconductor device according to  claim 4 , wherein in the step of annealing the semiconductor substrate, said hydrogen pressure is maintained between 300 Torr and 500 Torr. 
     
     
       6. A method of manufacturing a semiconductor device according to  claim 4 , wherein the pressure of the hydrogen atmosphere comprises a hydrogen partial pressure. 
     
     
       7. A method of treating a semiconductor surface, comprising:
 annealing a substrate having an exposed semiconductor surface in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface, 
 wherein the annealing planarizes the exposed semiconductor surface to a standard deviation of roughness (Rms) to 0.5 μm or less. 
 
     
     
       8. A method of manufacturing a semiconductor device according to  claim 7 , wherein in the step of annealing the substrate, said hydrogen pressure is maintained between 300 Torr and 500 Torr. 
     
     
       9. A method of treating a semiconductor device according to  claim 7 , wherein the pressure of the hydrogen atmosphere comprises a hydrogen partial pressure. 
     
     
       10. A method of treating a semiconductor surface, comprising:
 annealing a substrate having an exposed semiconductor surface in an atmosphere of a gas mixture containing an inert gas and hydrogen at a hydrogen partial pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface, 
 wherein the planarizing reduces the standard deviation of roughness (Rms) to 0.5 μm or less. 
 
     
     
       11. A method of manufacturing a semiconductor device according to  claim 10 , wherein in the step of annealing the substrate, said hydrogen partial pressure is maintained between 300 Torr and 500 Torr. 
     
     
       12. A method of manufacturing a semiconductor device comprising:
 exposing a semiconductor surface of a substrate; 
 annealing the substrate in a hydrogen atmosphere at a pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the semiconductor surface; and 
 forming a gate insulator film on the semiconductor surface, 
 wherein the hydrogen atmosphere is 100% hydrogen. 
 
     
     
       13. A method of manufacturing a semiconductor device comprising:
 forming a trench in a semiconductor substrate; 
 annealing the semiconductor substrate in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to round corners of the trench and to planarize a sidewall of the trench; and 
 forming a gate insulator film on an inner surface of the trench, 
 wherein the hydrogen atmosphere is 100% hydrogen. 
 
     
     
       14. A method of treating a semiconductor device comprising:
 annealing a substrate having an exposed semiconductor surface in a hydrogen atmosphere at a hydrogen pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface, 
 wherein the hydrogen atmosphere is 100% hydrogen. 
 
     
     
       15. A method of treating a semiconductor device comprising:
 annealing a substrate having an exposed semiconductor surface in an atmosphere of a gas mixture containing an inert gas and hydrogen at a hydrogen partial pressure between 200 Torr and 500 Torr and a temperature between 1000° C. and 1050° C. to planarize the exposed semiconductor surface, 
 wherein the hydrogen atmosphere is 100% hydrogen.