Inventor · disambiguated record
Hiroyuki Ogawa
Also filed as: OGAWA HIROYUKI
247 granted patents·45 pending applications·3,346 citations·filing 1979–2024
99Inventor score
Files withSANDISK TECHNOLOGIES LLC77SHARP KK20OGAWA HIROYUKI18ADV LCD TECH DEV CT CO LTD17TOYOTA MOTOR CO LTD17
Top patents by PatentIndex Score
292 records- 0199US11991881B2Three-dimensional memory device with off-center or reverse slope staircase regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 21, 2024·6 cites·18 claims
- 0299US11322483B1Three-dimensional memory device containing a shared word line driver across different tiers and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·16 cites·20 claims
- 0399US9953992B1Mid-plane word line switch connection for CMOS under three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 24, 2018·64 cites·13 claims
- 0499US9595535B1Integration of word line switches with word line contact via structuresSANDISK TECHNOLOGIES INC·Filed 2016·Granted Mar 14, 2017·56 cites·10 claims
- 0598US10381371B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 13, 2019·38 cites·10 claims
- 0698US10269620B2Multi-tier memory device with through-stack peripheral contact via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 23, 2019·34 cites·15 claims
- 0798US10249640B2Within-array through-memory-level via structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 2, 2019·52 cites·27 claims
- 0898US10038006B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 31, 2018·63 cites·28 claims
- 0998US10020363B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 10, 2018·51 cites·17 claims
- 1098US10008570B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 26, 2018·62 cites·16 claims
- 1198US9985098B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 29, 2018·85 cites·11 claims
- 1298US9818759B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·52 cites·13 claims
- 1398US9818693B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·57 cites·20 claims
- 1498US9806093B2Through-memory-level via structures for a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Oct 31, 2017·83 cites·25 claims
- 1598US9721663B1Word line decoder circuitry under a three-dimensional memory arraySANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 1, 2017·55 cites·33 claims
- 1698US9691781B1Vertical resistor in 3D memory device with two-tier stackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 27, 2017·39 cites·20 claims
- 1798US9412749B1Three dimensional memory device having well contact pillar and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 9, 2016·77 cites·31 claims
- 1898US9356034B1Multilevel interconnect structure and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 31, 2016·51 cites·22 claims
- 1997US11393836B2Three-dimensional memory device with separated source-side lines and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jul 19, 2022·7 cites·20 claims
- 2097US10903237B1Three-dimensional memory device including stepped connection plates and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Jan 26, 2021·44 cites·20 claims
- 2197US10381443B2Bulb-shaped memory stack structures for direct source contact in three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 13, 2019·28 cites·10 claims
- 2297US10355017B1CMOS devices containing asymmetric contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·45 cites·10 claims
- 2397US10256248B2Through-memory-level via structures between staircase regions in a three-dimensional memory device and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 9, 2019·42 cites·25 claims
- 2497US10115632B1Three-dimensional memory device having conductive support structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·40 cites·11 claims
- 2597US9935124B2Split memory cells with unsplit select gates in a three-dimensional memory deviceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Apr 3, 2018·17 cites·22 claims
- 2697US9929174B1Three-dimensional memory device having non-uniform spacing among memory stack structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 27, 2018·38 cites·26 claims
- 2797US9876031B1Three-dimensional memory device having passive devices at a buried source line level and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jan 23, 2018·113 cites·14 claims
- 2897US9608043B2Method of operating memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Mar 28, 2017·19 cites·20 claims
- 2997US9449983B2Three dimensional NAND device with channel located on three sides of lower select gate and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 20, 2016·49 cites·4 claims
- 3097US8784248B2Engine start control device of hybrid vehicleMURAKAMI AKIRA·Filed 2010·Granted Jul 22, 2014·79 cites·20 claims
- 3196US10833101B2Three-dimensional memory device with horizontal silicon channels and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Nov 10, 2020·20 cites·12 claims
- 3296US9991282B1Three-dimensional memory device having passive devices at a buried source line level and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 5, 2018·26 cites·8 claims
- 3396US9991280B2Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jun 5, 2018·40 cites·15 claims
- 3496US9887240B2Method of fabricating memory array having divided apart bit lines and partially divided bit line selector switchesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Feb 6, 2018·14 cites·20 claims
- 3596US9548313B2Method of making a monolithic three dimensional NAND string using a select gate etch stop layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 17, 2017·25 cites·17 claims
- 3696US9530785B1Three-dimensional memory devices having a single layer channel and methods of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·24 cites·25 claims
- 3796US9305937B1Bottom recess process for an outer blocking dielectric layer inside a memory openingSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 5, 2016·39 cites·45 claims
- 3896US8992376B2Power transmission deviceOGAWA HIROYUKI·Filed 2010·Granted Mar 31, 2015·36 cites·3 claims
- 3995US10770459B2CMOS devices containing asymmetric contact via structuresSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Sep 8, 2020·14 cites·13 claims
- 4095US10515897B2Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 24, 2019·14 cites·9 claims
- 4195US10354956B1Three-dimensional memory device containing hydrogen diffusion barrier structures for CMOS under array architecture and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·13 cites·12 claims
- 4295US10290645B2Three-dimensional memory device containing hydrogen diffusion barrier layer for CMOS under array architecture and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 14, 2019·14 cites·20 claims
- 4395US10256099B1Transistors having semiconductor-metal composite gate electrodes containing different thickness interfacial dielectrics and methods of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 9, 2019·33 cites·20 claims
- 4495US9899399B23D NAND device with five-folded memory stack structure configurationSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Feb 20, 2018·11 cites·26 claims
- 4595US9768186B2Three dimensional memory device having well contact pillar and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 19, 2017·16 cites·17 claims
- 4695US8961363B2Continuously variable transmissionSHIINA TAKAHIRO·Filed 2011·Granted Feb 24, 2015·36 cites·16 claims
- 4795US6362507B1Electro-optical devices in which pixel section and the driver circuit are disposed over the same substrateSEMICONDUCTOR ENERGY LAB·Filed 2000·Granted Mar 26, 2002·112 cites·30 claims
- 4894US11501835B2Three-dimensional memory device and method of erasing thereof from a source sideSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 15, 2022·4 cites·19 claims
- 4994US10515907B2Three-dimensional memory device containing hydrogen diffusion blocking structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 24, 2019·13 cites·17 claims
- 5094US10403632B23D NAND device with five-folded memory stack structure configurationSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Sep 3, 2019·9 cites·9 claims
Showing the top 50 of 292 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →