Inventor · disambiguated record
Hiroto Ohtake
Also filed as: OHTAKE HIROTO
25 granted patents·2 pending applications·211 citations·filing 1998–2018
95Inventor score
Top patents by PatentIndex Score
27 records- 0198US10340123B2Multi-frequency power modulation for etching high aspect ratio featuresTOKYO ELECTRON LTD·Filed 2017·Granted Jul 2, 2019·44 cites·20 claims
- 0294US9087798B2Etching methodTOKYO ELECTRON LTD·Filed 2014·Granted Jul 21, 2015·41 cites·3 claims
- 0388US8664125B2Highly selective spacer etch process with reduced sidewall spacer slimmingRALEY ANGELIQUE DENISE·Filed 2011·Granted Mar 4, 2014·12 cites·20 claims
- 0488US8278763B2Semiconductor deviceTADA MUNEHIRO·Filed 2011·Granted Oct 2, 2012·7 cites·11 claims
- 0585US7622808B2Semiconductor device and having trench interconnectionNEC CORP·Filed 2005·Granted Nov 24, 2009·10 cites·5 claims
- 0682US10529589B2Method of plasma etching of silicon-containing organic film using sulfur-based chemistryTOKYO ELECTRON LTD·Filed 2018·Granted Jan 7, 2020·4 cites·21 claims
- 0781US8043957B2Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductorNEC CORP·Filed 2007·Granted Oct 25, 2011·6 cites·18 claims
- 0880US7999392B2Multilayer wiring structure, semiconductor device, pattern transfer mask and method for manufacturing multilayer wiring structureRENESAS ELECTRONICS CORP·Filed 2006·Granted Aug 16, 2011·9 cites·8 claims
- 0976US7701060B2Wiring structure and method for manufacturing the sameNEC CORP·Filed 2004·Granted Apr 20, 2010·20 cites·18 claims
- 1076US6054063AMethod for plasma treatment and apparatus for plasma treatmentNEC CORP·Filed 1998·Granted Apr 25, 2000·28 cites·13 claims
- 1172US9305795B2Plasma processing methodTOKYO ELECTRON LTD·Filed 2014·Granted Apr 5, 2016·3 cites·4 claims
- 1272US8592303B2Wiring structure and method for manufacturing the sameTADA MUNEHIRO·Filed 2010·Granted Nov 26, 2013·3 cites·7 claims
- 1370US6972453B2Method of manufacturing a semiconductor device capable of etching a multi-layer of organic films at a high selectivityNEC CORP·Filed 2002·Granted Dec 6, 2005·14 cites·15 claims
- 1469US8808562B2Dry metal etching methodOHSAWA YUSUKE·Filed 2011·Granted Aug 19, 2014·3 cites·15 claims
- 1565US9502537B2Method of selectively removing a region formed of silicon oxide and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2014·Granted Nov 22, 2016·1 cites·23 claims
- 1662US9412607B2Plasma etching methodTOKYO ELECTRON LTD·Filed 2014·Granted Aug 9, 2016·1 cites·5 claims
- 1761US9373520B2Multilayer film etching method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2015·Granted Jun 21, 2016·1 cites·12 claims
- 1861US9105585B2Etching methodTOKYO ELECTRON LTD·Filed 2014·Granted Aug 11, 2015·1 cites·10 claims
- 1958US9570312B2Plasma etching methodTOKYO ELECTRON LTD·Filed 2013·Granted Feb 14, 2017·1 cites·4 claims
- 2052US8803285B2Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereofOHTAKE HIROTO·Filed 2007·Granted Aug 12, 2014·1 cites·15 claims
- 2148US2009014887A1Method of producing multilayer interconnection and multilayer interconnection structureNEC CORP·Filed 2007·Application pending·0 cites
- 2246US9034698B2Semiconductor device manufacturing methodTOKYO ELECTRON LTD·Filed 2014·Granted May 19, 2015·0 cites·7 claims
- 2346US7482694B2Semiconductor device and its manufacturing methodNEC COPORATION·Filed 2003·Granted Jan 27, 2009·1 cites·5 claims
- 2441US10410873B2Power modulation for etching high aspect ratio featuresTOKYO ELECTRON LTD·Filed 2017·Granted Sep 10, 2019·0 cites·21 claims
- 2541US10381238B2Process for performing self-limited etching of organic materialsTOKYO ELECTRON LTD·Filed 2018·Granted Aug 13, 2019·0 cites·19 claims
- 2640US10115591B2Selective SiARC removalTOKYO ELECTRON LTD·Filed 2017·Granted Oct 30, 2018·0 cites·19 claims
- 2740US2011316161A1Method of producing a dual damascene multilayer interconnection and multilayer interconnection structureOHTAKE HIROTO·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →