Inventor · disambiguated record
Hisakazu Otoi
Also filed as: OTOI HISAKAZU
20 granted patents·5 pending applications·532 citations·filing 2003–2023
95Inventor score
Top patents by PatentIndex Score
25 records- 0199US10354980B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·168 cites·16 claims
- 0299US10354987B1Three-dimensional memory device containing bonded chip assembly with through-substrate via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 16, 2019·139 cites·20 claims
- 0398US10516025B1Three-dimensional NAND memory containing dual protrusion charge trapping regions and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 24, 2019·35 cites·7 claims
- 0497US10490569B2Three-dimensional memory device and method of making the same using concurrent formation of memory openings and contact openingsSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 26, 2019·18 cites·17 claims
- 0597US10347654B1Three-dimensional memory device employing discrete backside openings and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jul 9, 2019·61 cites·12 claims
- 0696US10615172B2Three-dimensional memory device having double-width staircase regions and methods of manufacturing the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 7, 2020·20 cites·15 claims
- 0796US10490564B2Three-dimensional memory device and methods of making the same using replacement drain select gate electrodesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Nov 26, 2019·13 cites·12 claims
- 0895US10985176B2Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 20, 2021·14 cites·14 claims
- 0995US10586803B2Three-dimensional memory device and methods of making the same using replacement drain select gate electrodesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Mar 10, 2020·9 cites·10 claims
- 1095US10115895B1Vertical field effect transisitors having a rectangular surround gate and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·15 cites·20 claims
- 1194US10892267B2Three-dimensional memory device containing through-memory-level contact via structures and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jan 12, 2021·11 cites·4 claims
- 1291US7705392B2Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Apr 27, 2010·18 cites·4 claims
- 1383US10629611B2Three-dimensional memory device and methods of making the same using replacement drain select gate electrodesSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 21, 2020·2 cites·19 claims
- 1480US8211777B2Method of manufacturing nonvolatile semiconductor deviceYONEMOCHI YASUAKI·Filed 2010·Granted Jul 3, 2012·5 cites·1 claims
- 1569US10879262B2Three-dimensional memory device containing eye-shaped contact via structures located in laterally-undulating trenches and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Dec 29, 2020·1 cites·13 claims
- 1660US2024260266A1Three-dimensional memory device containing silicon oxycarbide liners and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 1759US11996153B2Three-dimensional memory device with separated contact regions and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted May 28, 2024·0 cites·19 claims
- 1855US2010044772A1Nonvolatile semiconductor device and method of manufacturing nonvolatile semiconductor deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 1950US8669172B2Method of manufacturing nonvolatile semiconductor deviceYONEMOCHI YASUAKI·Filed 2012·Granted Mar 11, 2014·0 cites·7 claims
- 2045US11515317B2Three-dimensional memory device including through-memory-level via structures and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 29, 2022·0 cites·15 claims
- 2143US6930351B2Semiconductor device with dummy gate electrodeRENESAS TECH CORP·Filed 2003·Granted Aug 16, 2005·3 cites·23 claims
- 2243US2010044773A1Semiconductor memory deviceRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 2341US2008303066A1Semiconductor deviceRENESAS TECH CORP·Filed 2008·Application pending·0 cites
- 2437US10707314B2Surround gate vertical field effect transistors including tubular and strip electrodes and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Jul 7, 2020·0 cites·13 claims
- 2537US2019051703A1Two-dimensional array of surround gate vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →