Inventor · disambiguated record
Hiroji Ozaki
Also filed as: OZAKI HIROJI
40 granted patents·2 pending applications·1,054 citations·filing 1986–2018
98Inventor score
Files withMITSUBISHI ELECTRIC CORP34RENESAS ELECTRONICS CORP4RENESAS TECH CORP3MITSUBISHI DENKI KABUSHIKI KAS1
Top patents by PatentIndex Score
42 records- 0193US5216266ASemiconductor memory device having memory cells formed in trench and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jun 1, 1993·117 cites·7 claims
- 0291US4994893AField effect transistor substantially coplanar surface structureMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Feb 19, 1991·62 cites·12 claims
- 0389US10371582B2Signal generation circuit and temperature sensorRENESAS ELECTRONICS CORP·Filed 2018·Granted Aug 6, 2019·3 cites·6 claims
- 0489US6615097B2Production management systemMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Sep 2, 2003·37 cites·4 claims
- 0586US7709874B2Semiconductor device having a split gate structure with a recessed top face electrodeRENESAS TECH CORP·Filed 2007·Granted May 4, 2010·10 cites·6 claims
- 0686US6128403AWafer map analysis aid system, wafer map analyzing method and wafer processing methodMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 3, 2000·82 cites·22 claims
- 0786US5940300AMethod and apparatus for analyzing a fabrication lineMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 17, 1999·81 cites·9 claims
- 0886US5047817AStacked capacitor for semiconductor memory deviceMITSUBISHI DENKI KABUSHIKI KAS·Filed 1989·Granted Sep 10, 1991·42 cites·14 claims
- 0984US5272100AField effect transistor with T-shaped gate electrode and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 21, 1993·61 cites·3 claims
- 1082US5834817AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Nov 10, 1998·42 cites·5 claims
- 1181US5089863AField effect transistor with T-shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 18, 1992·33 cites·6 claims
- 1281US5084752ASemiconductor device having bonding pad comprising buffer layerMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jan 28, 1992·59 cites·19 claims
- 1380US5177571ALdd mosfet with particularly shaped gate electrode immune to hot electron effectMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Jan 5, 1993·37 cites·4 claims
- 1476US5225704AField shield isolation structure for semiconductor memory device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jul 6, 1993·37 cites·19 claims
- 1574US5164803ACmos semiconductor device with an element isolating field shieldMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Nov 17, 1992·36 cites·4 claims
- 1673US9891116B2Signal generation circuit and temperature sensorRENESAS ELECTRONICS CORP·Filed 2014·Granted Feb 13, 2018·2 cites·8 claims
- 1767US4984055ASemiconductor device having a plurality of conductive layers and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jan 8, 1991·33 cites·12 claims
- 1866US5521419ASemiconductor device having field shield element isolating structure and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 28, 1996·36 cites·10 claims
- 1965US5094965AField effect transistor having substantially coplanar surface structure and a manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Mar 10, 1992·21 cites·8 claims
- 2063US5650342AMethod of making a field effect transistor with a T shaped polysilicon gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 22, 1997·18 cites·3 claims
- 2163US5471080AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Nov 28, 1995·19 cites·2 claims
- 2263US5288661ASemiconductor device having bonding pad comprising buffer layerMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Feb 22, 1994·28 cites·4 claims
- 2357US5930614AMethod for forming MOS device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jul 27, 1999·22 cites·4 claims
- 2455US5067000ASemiconductor device having field shield isolationMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Nov 19, 1991·17 cites·13 claims
- 2553US5543646AField effect transistor with a shaped gate electrodeMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Aug 6, 1996·11 cites·2 claims
- 2653US5459344AStacked capacitor type semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 17, 1995·12 cites·5 claims
- 2752US4996168AMethod for manufacturing P type semiconductor device employing diffusion of boron glassMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Feb 26, 1991·20 cites·11 claims
- 2850US7939448B2Semiconductor device having electrode and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2010·Granted May 10, 2011·0 cites·2 claims
- 2949US7816207B2Semiconductor device having electrode and manufacturing method thereofRENESAS TECH CORP·Filed 2010·Granted Oct 19, 2010·0 cites·3 claims
- 3049US2011175231A1Semiconductor Device Having Electrode and Manufacturing Method ThereofRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 3146US5097310AComplementary semiconductor device having improved device isolating regionMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 17, 1992·10 cites·10 claims
- 3246US4998161ALDD MOS device having an element separation region having an electrostatic screening electrodeMITSUBISHI ELECTRIC CORP·Filed 1989·Granted Mar 5, 1991·10 cites·20 claims
- 3343US5181094AComplementary semiconductor device having improved device isolating regionMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 19, 1993·9 cites·25 claims
- 3443US4956692ASemiconductor device having an isolation oxide filmMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 11, 1990·11 cites·4 claims
- 3542US5278437AStacked capacitor type semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jan 11, 1994·7 cites·3 claims
- 3641US5180683AMethod of manufacturing stacked capacitor type semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Jan 19, 1993·9 cites·6 claims
- 3740US2007164342A1Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 3839US5159417ASemiconductor device having short channel field effect transistor with extended gate electrode structure and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Oct 27, 1992·7 cites·16 claims
- 3939US4702796AMethod for fabricting a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Oct 27, 1987·9 cites·10 claims
- 4035US6319733B1Method of manufacturing semiconductor device, semiconductor equipment and manufacturing systemMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Nov 20, 2001·4 cites·16 claims
- 4130US4956310ASemiconductor memory device and fabricating method thereofMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Sep 11, 1990·0 cites·4 claims
- 4230US4763182ASemiconductor memory device with deep bit-line channel stopperMITSUBISHI ELECTRIC CORP·Filed 1986·Granted Aug 9, 1988·0 cites·2 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →