Semiconductor Device Having Electrode and Manufacturing Method Thereof

Abstract

A manufacturing method of a semiconductor device includes a first electrode formation step of forming a control gate electrode above a surface of a semiconductor substrate with a control gate insulating film interposed between the control gate electrode and the semiconductor substrate, a step of forming a storage node insulating film on the surface of the semiconductor substrate, and a second electrode formation step of forming a memory gate electrode on a surface of the storage node insulating film. The second electrode formation step includes a step of forming a memory gate electrode layer on the surface of the storage node insulating film, a step of forming an auxiliary film, having an etching rate slower than that of the memory gate electrode layer, on a surface of the memory gate electrode layer, and a step of performing anisotropic etching on the memory gate electrode layer and the auxiliary film.

1 - 11 . (canceled) 
     
     
         12 . A semiconductor device comprising:
 a gate electrode provided above a surface of a semiconductor substrate with a first insulating film interposed between said gate electrode and said semiconductor substrate; and   sidewall insulating films formed on both left and right sides of said gate electrode in a sectional shape, wherein   said gate electrode is formed such that left and right surfaces facing to said sidewall insulating films are substantially parallel with each other in the sectional shape thereof, and   said gate electrode is formed such that a top face is recessed in the sectional shape thereof.   
     
     
         13 . The semiconductor device according to  claim 12 , wherein
 said gate electrode is formed such that a substantially center portion of said top face is recessed in a width direction in the sectional shape thereof.