Inventor · disambiguated record
Hiroshi Shikauchi
Also filed as: SHIKAUCHI HIROSHI
22 granted patents·9 pending applications·47 citations·filing 2013–2018
92Inventor score
Top patents by PatentIndex Score
31 records- 0193US10020373B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Jul 10, 2018·17 cites·10 claims
- 0286US10586701B2Semiconductor base having a composition graded buffer layer stackSANKEN ELECTRIC CO LTD·Filed 2016·Granted Mar 10, 2020·5 cites·19 claims
- 0385US10115589B2Epitaxial substrate for electronic devices, electronic device, method for producing the epitaxial substrate for electronic devices, and method for producing the electronic deviceSHINETSU HANDOTAI KK·Filed 2015·Granted Oct 30, 2018·4 cites·8 claims
- 0484US9673052B2Silicon-based substrate having first and second portionsSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jun 6, 2017·5 cites·8 claims
- 0581US10833184B2Semiconductor device substrate, semiconductor device, and method for manufacturing semiconductor device substrateSANKEN ELECTRIC CO LTD·Filed 2017·Granted Nov 10, 2020·3 cites·17 claims
- 0680US10553674B2Substrate for semiconductor device, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Feb 4, 2020·3 cites·20 claims
- 0780US10529842B2Semiconductor base substance having a boron containing buffer layer, semiconductor device including the same, and methods for manufacturing the semiconductor base substance and the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jan 7, 2020·3 cites·8 claims
- 0874US9876101B2Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Jan 23, 2018·2 cites·11 claims
- 0971US9966259B2Silicon-based substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted May 8, 2018·1 cites·8 claims
- 1071US9520286B2Semiconductor substrate, semiconductor device and method of manufacturing the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Dec 13, 2016·2 cites·20 claims
- 1167US9941124B1Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Apr 10, 2018·1 cites·2 claims
- 1264US10068985B2Method for manufacturing semiconductor substrate, method for manufacturing semiconductor device, semiconductor substrate, and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Granted Sep 4, 2018·1 cites·8 claims
- 1350US2018245240A1Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2018·Application pending·0 cites
- 1449US10679984B2Semiconductor device and method for forming the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2018·Granted Jun 9, 2020·0 cites·17 claims
- 1549US9938638B2Method for producing semiconductor epitaxial wafer and semiconductor epitaxial waferSHINETSU HANDOTAI KK·Filed 2015·Granted Apr 10, 2018·0 cites·9 claims
- 1646US10297557B2Semiconductor device and method for manufacturing the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted May 21, 2019·0 cites·19 claims
- 1746US10158013B1Semiconductor device and method for manufacturing the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·18 claims
- 1846US9401420B2Semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2014·Granted Jul 26, 2016·0 cites·9 claims
- 1945US10410978B2Semiconductor wafer and method for forming semiconductorSANKEN ELECTRIC CO LTD·Filed 2018·Granted Sep 10, 2019·0 cites·16 claims
- 2044US9281187B2Method for manufacturing nitride semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Granted Mar 8, 2016·0 cites·8 claims
- 2143US10186586B1Semiconductor device and method for forming the semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2017·Granted Jan 22, 2019·0 cites·16 claims
- 2241US2015028457A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSHINETSU HANDOTAI KK·Filed 2013·Application pending·0 cites
- 2340US2019206748A1Semiconductor Device and Method for Detecting a Crack of the Semiconductor DeviceSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
- 2440US2015084163A1Epitaxial substrate, semiconductor device, and method for manufacturing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2013·Application pending·0 cites
- 2539US10319587B2Method of manufacturing epitaxial wafer and silicon-based substrate for epitaxial growthSHINETSU HANDOTAI KK·Filed 2015·Granted Jun 11, 2019·0 cites·10 claims
- 2638US2020020679A1Semiconductor Device and Method for Forming the Semiconductor DeviceSANKEN ELECTRIC CO LTD·Filed 2018·Application pending·0 cites
- 2736US9991379B1Semiconductor device with a gate insulating film formed on an inner wall of a trench, and method of manufacturing the sameSANKEN ELECTRIC CO LTD·Filed 2016·Granted Jun 5, 2018·0 cites·8 claims
- 2834US2017323960A1Epitaxial wafer, semiconductor device, method for producing epitaxial wafer, and method for producing semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
- 2934US2019035899A1Semiconductor Device and Method for Manufacturing the Semiconductor DeviceSANKEN ELECTRIC CO LTD·Filed 2017·Application pending·0 cites
- 3033US2017133217A1Semiconductor substrate and semiconductor deviceSANKEN ELECTRIC CO LTD·Filed 2015·Application pending·0 cites
- 3131US2018138300A1Semiconductor device and method of manufacturing the sameSANKEN ELECTRIC CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →