Inventor · disambiguated record
Hiroshi Tobimatsu
Also filed as: TOBIMATSU HIROSHI
12 granted patents·2 pending applications·138 citations·filing 1990–2010
90Inventor score
Files withMITSUBISHI ELECTRIC CORP6RENESAS TECH CORP5RENESAS ELECTRONICS CORP2RYODEN SEMICONDUCTOR SYST ENG1
Top patents by PatentIndex Score
14 records- 0183US5171711AMethod of manufacturing integrated circuit devicesMITSUBISHI ELECTRIC CORP·Filed 1991·Granted Dec 15, 1992·63 cites·20 claims
- 0266US7582950B2Semiconductor chip having gettering layer, and method for manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Sep 1, 2009·3 cites·2 claims
- 0366US6645859B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 11, 2003·11 cites·6 claims
- 0463US7851355B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2007·Granted Dec 14, 2010·1 cites·11 claims
- 0561US7154184B2Interconnection structure of semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted Dec 26, 2006·9 cites·5 claims
- 0658US6544904B1Method of manufacturing semiconductor deviceRYODEN SEMICONDUCTOR SYST ENG·Filed 2002·Granted Apr 8, 2003·7 cites·9 claims
- 0751US5600151ASemiconductor device comprising a semiconductor substrate, an element formed thereon, and a stress-buffering film made of a silicone ladder resinMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Feb 4, 1997·21 cites·5 claims
- 0851US2009286354A1Semiconductor chip having gettering layer, and method for manufacturing the sameRENESAS TECH CORP·Filed 2009·Application pending·0 cites
- 0949US7489040B2Interconnection structure of semiconductor deviceRENESAS TECH CORP·Filed 2006·Granted Feb 10, 2009·0 cites·4 claims
- 1048US8021979B2Method of manufacturing semiconductor deviceRENESAS ELECTRONICS CORP·Filed 2010·Granted Sep 20, 2011·0 cites·12 claims
- 1146US6046488ASemiconductor device having conductive layer and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 4, 2000·13 cites·4 claims
- 1242US6759317B2Method of manufacturing semiconductor device having passivation film and buffer coating filmRENESAS TECH CORP·Filed 2001·Granted Jul 6, 2004·1 cites·5 claims
- 1340US5126828AWafer scale integration deviceMITSUBISHI ELECTRIC CORP·Filed 1990·Granted Jun 30, 1992·9 cites·13 claims
- 1435US2004016987A1Semiconductor device with insulator and manufacturing method thereforMITSUBISHI ELECTRIC CORP·Filed 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →