Inventor · disambiguated record
Hirokazu Ueda
Also filed as: UEDA HIROKAZU
37 granted patents·30 pending applications·453 citations·filing 1991–2025
97Inventor score
Files withTOKYO ELECTRON LTD44MICRON TECHNOLOGY INC6UEDA HIROKAZU4KMT SEMICONDUCTOR LTD2FUJITSU LTD1
Top patents by PatentIndex Score
67 records- 0198US10249498B2Method for using heated substrates for process chemistry controlTOKYO ELECTRON LTD·Filed 2016·Granted Apr 2, 2019·41 cites·17 claims
- 0291US9230799B2Method for fabricating semiconductor device and the semiconductor deviceTERAMOTO AKINOBU·Filed 2012·Granted Jan 5, 2016·14 cites·11 claims
- 0389US7458697B2Lamp cooling device and rear projection display apparatusSONY CORP·Filed 2007·Granted Dec 2, 2008·12 cites·9 claims
- 0488US11972929B2Processing apparatus and film forming methodTOKYO ELECTRON LTD·Filed 2020·Granted Apr 30, 2024·2 cites·9 claims
- 0588US5824158AChemical vapor deposition using inductively coupled plasma and system thereforKOBE STEEL LTD·Filed 1997·Granted Oct 20, 1998·67 cites·4 claims
- 0687US5196066AFacing material spray apparatusKUSUDA COMPANY LIMITED·Filed 1991·Granted Mar 23, 1993·114 cites·3 claims
- 0785US9658106B2Plasma processing apparatus and measurement methodTOKYO ELECTRON LTD·Filed 2015·Granted May 23, 2017·4 cites·7 claims
- 0884US7366051B2Word line driver circuitry and methods for using the sameMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 29, 2008·12 cites·12 claims
- 0978US10388524B2Film forming method, boron film, and film forming apparatusTOKYO ELECTRON LTD·Filed 2017·Granted Aug 20, 2019·2 cites·12 claims
- 1078US6894354B2Trench isolated transistors, trench isolation structures, memory cells, and DRAMsKMT SEMICONDUCTOR LTD·Filed 2001·Granted May 17, 2005·26 cites·14 claims
- 1178US5218330AApparatus and method for easily adjusting the resonant frequency of a dielectric TEM resonatorFUJITSU LTD·Filed 1991·Granted Jun 8, 1993·35 cites·22 claims
- 1277US6502834B1Holding chuck for a tire-wheel with a chatter-suppressing deviceHOWA MACHINERY LTD·Filed 2001·Granted Jan 7, 2003·29 cites·4 claims
- 1374US9165771B2Pulsed gas plasma doping method and apparatusTOKYO ELECTRON LTD·Filed 2014·Granted Oct 20, 2015·3 cites·20 claims
- 1471US12406862B2Vacuum processing apparatus and oxidizing gas removal methodTOKYO ELECTRON LTD·Filed 2023·Granted Sep 2, 2025·0 cites·3 claims
- 1570US12247768B2Electrocaloric effect element, heat transfer device, semiconductor manufacturing device, and electrocaloric effect element control methodTOKYO ELECTRON LTD·Filed 2021·Granted Mar 11, 2025·0 cites·17 claims
- 1668US9034774B2Film forming method using plasmaTANAKA KOUJI·Filed 2012·Granted May 19, 2015·2 cites·7 claims
- 1767US6387735B1Method for manufacturing field effect transistor capable of successfully controlling transistor characteristics relating to the short-channel effectKMT SEMICONDUCTOR LTD·Filed 2000·Granted May 14, 2002·12 cites·3 claims
- 1866US7269091B2Word line driver circuitry and methods for using the sameMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 11, 2007·11 cites·25 claims
- 1966US6873559B2Method and apparatus for enhanced sensing of low voltage memoryMICRON TECHNOLOGY INC·Filed 2003·Granted Mar 29, 2005·12 cites·38 claims
- 2066US6830977B1Methods of forming an isolation trench in a semiconductor, methods of forming an isolation trench in a surface of a silicon wafer, methods of forming an isolation trench-isolated transistor, trench-isolated transistor, trench isolation structures formed in a semiconductor, memory cells and dramsMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 14, 2004·12 cites·17 claims
- 2163US12417928B2Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2023·Granted Sep 16, 2025·0 cites·9 claims
- 2262US8486792B2Film forming method of silicon oxide film, silicon oxide film, semiconductor device, and manufacturing method of semiconductor deviceUEDA HIROKAZU·Filed 2009·Granted Jul 16, 2013·2 cites·27 claims
- 2362US2025347002A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 2461US12077865B2Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2022·Granted Sep 3, 2024·0 cites·15 claims
- 2561US2022403509A1Vacuum processing apparatus and oxidizing gas removal methodTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 2660US2024200193A1Method of performing cleaning and apparatus for performing substrate processingTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 2759US12011738B2Substrate processing method and ionic liquidTOKYO ELECTRON LTD·Filed 2023·Granted Jun 18, 2024·0 cites·18 claims
- 2858US2023062105A1Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2957US12060641B2Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 3056US2025191910A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 3155US5166088AMethod of manufacturing semiconductor device contact vias in layers comprising silicon nitride and glassSHARP KK·Filed 1991·Granted Nov 24, 1992·32 cites·10 claims
- 3255US2009311872A1Gas ring, apparatus for processing semiconductor substrate, the apparatus including the gas ring, and method of processing semiconductor substrate by using the apparatusTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 3355US2023111710A1Purification processing apparatus, substrate processing system, and processing methodTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 3454US11842886B2Plasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2020·Granted Dec 12, 2023·0 cites·5 claims
- 3554US2014367699A1Method for fabricating semiconductor device and the semiconductor deviceUNIV TOHOKU·Filed 2014·Application pending·0 cites
- 3654US2019301019A1Boron-based film forming method and apparatusTOKYO ELECTRON LTD·Filed 2019·Application pending·0 cites
- 3752US11615957B2Method for forming boron-based film, formation apparatusTOKYO ELECTRON LTD·Filed 2019·Granted Mar 28, 2023·0 cites·17 claims
- 3851US2025174439A1Substrate processing apparatusTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 3951US2024420970A1Liquid circulation system, substrate processing apparatus, and liquid circulation methodTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 4050US12486575B2Apparatus for processing substrate, gas shower head, and method for processing substrateTOKYO ELECTRON LTD·Filed 2022·Granted Dec 2, 2025·0 cites·7 claims
- 4150US12112921B2Plasma processing method and plasma processing apparatusTOKYO ELECTRON LTD·Filed 2019·Granted Oct 8, 2024·0 cites·6 claims
- 4250US2025067664A1Determination method and substrate processing apparatusTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 4349US9472404B2Doping method, doping apparatus and method of manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2014·Granted Oct 18, 2016·0 cites·14 claims
- 4449US2025144892A1Bonding method and bonding apparatusTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 4548US11145522B2Method of forming boron-based film, and film forming apparatusTOKYO ELECTRON LTD·Filed 2019·Granted Oct 12, 2021·0 cites·11 claims
- 4648US2023223251A1Method of manufacturing semiconductor device, semiconductor manufacturing device, and systemTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 4747US7268402B2Memory cell with trench-isolated transistor including first and second isolation trenchesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 11, 2007·0 cites·14 claims
- 4846US9029249B2Plasma doping apparatus and plasma doping methodTOKYO ELECTRON LTD·Filed 2013·Granted May 12, 2015·0 cites·16 claims
- 4946US8497214B2Semiconductor device manufacturing methodUEDA HIROKAZU·Filed 2008·Granted Jul 30, 2013·0 cites·8 claims
- 5046US5864143AHigh current ion implanter and method of ion implant by the implanterKTI SEMICONDUCTOR LTD·Filed 1997·Granted Jan 26, 1999·9 cites·4 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →