Inventor · disambiguated record
Hitoshi Wakabayashi
Also filed as: WAKABAYASHI HITOSHI
22 granted patents·4 pending applications·369 citations·filing 1976–2019
95Inventor score
Top patents by PatentIndex Score
26 records- 0196US7719043B2Semiconductor device with fin-type field effect transistor and manufacturing method thereof.NEC CORP·Filed 2005·Granted May 18, 2010·64 cites·22 claims
- 0295US7701018B2Semiconductor device and method for manufacturing sameNEC CORP·Filed 2005·Granted Apr 20, 2010·45 cites·34 claims
- 0393US9337305B2Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regionsSONY CORP·Filed 2015·Granted May 10, 2016·6 cites·18 claims
- 0493US6483151B2Semiconductor device and method of manufacturing the sameNEC CORP·Filed 2001·Granted Nov 19, 2002·90 cites·24 claims
- 0589US4069394AStereophonic sound reproduction systemSONY CORP·Filed 1976·Granted Jan 17, 1978·46 cites·9 claims
- 0685US8384167B2Semiconductor device with field effect transistor and manufacturing method thereofSONY CORP·Filed 2010·Granted Feb 26, 2013·8 cites·15 claims
- 0785US7830703B2Semiconductor device and manufacturing method thereofNEC CORP·Filed 2005·Granted Nov 9, 2010·13 cites·35 claims
- 0885US7612416B2Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the sameNEC CORP·Filed 2004·Granted Nov 3, 2009·36 cites·14 claims
- 0976US6933569B2Soi mosfetNEC CORP·Filed 2003·Granted Aug 23, 2005·24 cites·17 claims
- 1074US7723808B2Semiconductor device and method of manufacturing semiconductor deviceNEC CORP·Filed 2006·Granted May 25, 2010·6 cites·20 claims
- 1169US10854751B2Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regionsSONY CORP·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
- 1266US10535769B2Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regionsSONY CORP·Filed 2019·Granted Jan 14, 2020·0 cites·14 claims
- 1363US10269961B2Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regionsSONY CORP·Filed 2018·Granted Apr 23, 2019·0 cites·13 claims
- 1460US9947790B2Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regionsSONY CORP·Filed 2017·Granted Apr 17, 2018·0 cites·19 claims
- 1559US9601622B2Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and stress-introducing layer between channel region and source and drain regionsSONY CORP·Filed 2016·Granted Mar 21, 2017·0 cites·20 claims
- 1659US5593923AMethod of fabricating semiconductor device having refractory metal silicide layer on impurity region using damage implant and single step annealNEC CORP·Filed 1995·Granted Jan 14, 1997·20 cites·20 claims
- 1753US6916695B2Semiconductor device and method of manufacturing the sameNEC CORP·Filed 2002·Granted Jul 12, 2005·5 cites·4 claims
- 1852US9153663B2Semiconductor device having a stress-inducing layer between channel region and source and drain regionsMAYUZUMI SATORU·Filed 2010·Granted Oct 6, 2015·0 cites·19 claims
- 1945US11513149B2Method for evaluating electrical defect density of semiconductor layer, and semiconductor elementSUMITOMO CHEMICAL CO·Filed 2018·Granted Nov 29, 2022·0 cites·3 claims
- 2041US11652150B2Charge trap evaluation method and semiconductor elementSUMITOMO CHEMICAL CO·Filed 2018·Granted May 16, 2023·0 cites·16 claims
- 2141US9343536B2Semiconductor deviceTOSHIBA KK·Filed 2015·Granted May 17, 2016·0 cites·18 claims
- 2238US2007257277A1Semiconductor Device and Method for Manufacturing the SameNEC CORP·Filed 2005·Application pending·0 cites
- 2337US6121120AMethod for manufacturing semiconductor device capable of flattening surface of selectively-grown silicon layerNEC CORP·Filed 1998·Granted Sep 19, 2000·6 cites·51 claims
- 2436US2007187682A1Semiconductor device having fin-type effect transistorNEC CORP·Filed 2004·Application pending·0 cites
- 2536US2007075372A1Semiconductor device and manufacturing process thereforNEC CORP·Filed 2004·Application pending·0 cites
- 2632US2009014795A1Substrate for field effect transistor, field effect transistor and method for production thereofKOH RISHO·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →