Inventor · disambiguated record
Hiu Yung Wong
Also filed as: WONG HIU Y · WONG HIU YUNG
12 granted patents·25 citations·filing 2007–2019
86Inventor score
Top patents by PatentIndex Score
12 records- 0188US11348017B1Machine learning method and framework for optimizing setups for accurate, speedy and robust TCAD simulationsSYNOPSYS INC·Filed 2018·Granted May 31, 2022·13 cites·20 claims
- 0275US10769339B1Local band-to-band-tunneling model for TCAD simulationSYNOPSYS INC·Filed 2019·Granted Sep 8, 2020·2 cites·20 claims
- 0374US7482217B1Forming metal-semiconductor films having different thicknesses within different regions of an electronic deviceSPANSION LLC·Filed 2007·Granted Jan 27, 2009·4 cites·20 claims
- 0471US10699914B1On-chip heating and self-annealing in FinFETs with anti-punch-through implantsSYNOPSYS INC·Filed 2018·Granted Jun 30, 2020·1 cites·21 claims
- 0568US10777638B1Constricted junctionless FinFET/nanowire/nanosheet device having cascode portionSYNOPSYS INC·Filed 2019·Granted Sep 15, 2020·1 cites·22 claims
- 0667US10644107B1Normally-off gallium oxide field-effect transistorSYNOPSYS INC·Filed 2018·Granted May 5, 2020·1 cites·24 claims
- 0767US10128232B2Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regionsSYNOPSYS INC·Filed 2017·Granted Nov 13, 2018·1 cites·30 claims
- 0866US11152313B1Using threading dislocations in GaN/Si systems to generate physically unclonable functionsSYNOPSYS INC·Filed 2019·Granted Oct 19, 2021·1 cites·14 claims
- 0966US9837523B2Tined gate to control threshold voltage in a device formed of materials having piezoelectric propertiesSYNOPSYS INC·Filed 2016·Granted Dec 5, 2017·1 cites·41 claims
- 1053US10403625B2Heterojunction field effect transistor device with serially connected enhancement mode and depletion mode gate regionsSYNOPSYS INC·Filed 2018·Granted Sep 3, 2019·0 cites·24 claims
- 1153US7880221B2Forming metal-semiconductor films having different thicknesses within different regions of an electronic deviceSPANSION LLC·Filed 2008·Granted Feb 1, 2011·0 cites·20 claims
- 1251US10733348B2Tined gate to control threshold voltage in a device formed of materials having piezoelectric propertiesSYNOPSYS INC·Filed 2018·Granted Aug 4, 2020·0 cites·29 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →