Inventor · disambiguated record
Hirokatsu Yashiro
Also filed as: YASHIRO HIROKATSU
12 granted patents·3 pending applications·222 citations·filing 1983–2014
90Inventor score
Files withNIPPON STEEL CORP7AIGO TAKASHI5FUJIMOTO TATSUO1MORITA MITSURU1NIPPON STEEL & SUMITOMO METAL CORP1
Top patents by PatentIndex Score
15 records- 0194US8707944B2Saw wireMORITA MITSURU·Filed 2011·Granted Apr 29, 2014·18 cites·16 claims
- 0291US5017018AClinical thermometerNIPPON STEEL CORP·Filed 1988·Granted May 21, 1991·116 cites·14 claims
- 0380US4621264AMethod and apparatus for measuring water level in a wellNIPPON STEEL CORP·Filed 1984·Granted Nov 4, 1986·54 cites·20 claims
- 0477US8901570B2Epitaxial silicon carbide single crystal substrate and process for producing the sameAIGO TAKASHI·Filed 2011·Granted Dec 2, 2014·5 cites·2 claims
- 0565US9915011B2Low resistivity single crystal silicon carbide waferFUJIMOTO TATSUO·Filed 2009·Granted Mar 13, 2018·1 cites·14 claims
- 0664US9691607B2Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the sameAIGO TAKASHI·Filed 2011·Granted Jun 27, 2017·2 cites·2 claims
- 0758US4641083AMethod and apparatus for supervising charges in blast furnace using electromagnetic wavesNIPPON STEEL CORP·Filed 1983·Granted Feb 3, 1987·9 cites·34 claims
- 0853US2015075422A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameNIPPON STEEL & SUMITOMO METAL CORP·Filed 2014·Application pending·0 cites
- 0952US8044408B2SiC single-crystal substrate and method of producing SiC single-crystal substrateNIPPON STEEL CORP·Filed 2009·Granted Oct 25, 2011·0 cites·9 claims
- 1045US8927396B2Production process of epitaxial silicon carbide single crystal substrateAIGO TAKASHI·Filed 2011·Granted Jan 6, 2015·0 cites·7 claims
- 1142US2011278596A1Epitaxial silicon carbide monocrystalline substrate and method of production of sameAIGO TAKASHI·Filed 2010·Application pending·0 cites
- 1240US4641036AMethod of and apparatus for imaging surface of object at high temperatureNIPPON STEEL CORP·Filed 1984·Granted Feb 3, 1987·7 cites·5 claims
- 1337US2013320357A1Epitaxial silicon carbide single crystal substrate and method for producing sameAIGO TAKASHI·Filed 2012·Application pending·0 cites
- 1436US4843894AMeasurement of sizes of falling particlesNIPPON STEEL CORP·Filed 1987·Granted Jul 4, 1989·6 cites·15 claims
- 1531US4912987AMeasurement of sizes of falling particlesNIPPON STEEL CORP·Filed 1989·Granted Apr 3, 1990·4 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →