Inventor · disambiguated record
Hong-Yan Chen
Also filed as: Chen hong-yan
46 granted patents·4 pending applications·767 citations·filing 2014–2025
98Inventor score
Files withSANDISK TECHNOLOGIES LLC24MICRON TECHNOLOGY INC16SANDISK TECHNOLOGIES INC9PURDUE RESEARCH FOUNDATION1
Top patents by PatentIndex Score
50 records- 0197US10283202B1Reducing disturbs with delayed ramp up of selected word line voltage after pre-charge during programmingSANDISK TECHNOLOGIES LLC·Filed 2017·Granted May 7, 2019·36 cites·20 claims
- 0297US9761320B1Reducing hot electron injection type of read disturb during read recovery phase in 3D memorySANDISK TECHNOLOGIES LLC·Filed 2016·Granted Sep 12, 2017·41 cites·20 claims
- 0397US9640273B1Mitigating hot electron program disturbSANDISK TECHNOLOGIES LLC·Filed 2016·Granted May 2, 2017·52 cites·20 claims
- 0497US9412463B1Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word linesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 9, 2016·48 cites·22 claims
- 0597US9361993B1Method of reducing hot electron injection type of read disturb in memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 7, 2016·52 cites·21 claims
- 0697US9336892B1Reducing hot electron injection type of read disturb in 3D non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted May 10, 2016·71 cites·21 claims
- 0797US9286994B1Method of reducing hot electron injection type of read disturb in dummy memory cellsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 15, 2016·61 cites·20 claims
- 0897US9286987B1Controlling pass voltages to minimize program disturb in charge-trapping memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Mar 15, 2016·55 cites·13 claims
- 0996US11282582B2Short program verify recovery with reduced programming disturbance in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 22, 2022·5 cites·20 claims
- 1096US10636500B1Reducing read disturb in two-tier memory device by modifying ramp up rate of word line voltages during channel dischargeSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 28, 2020·28 cites·20 claims
- 1196US10629272B1Two-stage ramp up of word line voltages in memory device to suppress read disturbSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Apr 21, 2020·27 cites·20 claims
- 1296US9747992B1Non-volatile memory with customized control of injection type of disturb during read operationsSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Aug 29, 2017·30 cites·20 claims
- 1395US11335412B2Managing sub-block erase operations in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·5 cites·20 claims
- 1495US11183245B1Pre-boosting scheme during a program operation in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 23, 2021·4 cites·20 claims
- 1595US10770157B1Method of reducing injection type of program disturb during program pre-charge in memory deviceSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 8, 2020·18 cites·20 claims
- 1694US10665299B1Memory device with channel discharge before program-verify based on data state and sub-block positionSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·17 cites·20 claims
- 1794US10269435B1Reducing program disturb by modifying word line voltages at interface in two-tier stack after program-verifySANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 23, 2019·16 cites·20 claims
- 1894US10210941B1Reducing injection type of read disturb in a cold read of a memory deviceSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Feb 19, 2019·17 cites·19 claims
- 1994US9406391B1Method of reducing hot electron injection type of read disturb in dummy memory cellsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 2, 2016·18 cites·20 claims
- 2093US10790003B1Maintaining channel pre-charge in program operationSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Sep 29, 2020·14 cites·20 claims
- 2193US10438671B1Reducing program disturb by modifying word line voltages at interface in two-tier stack during programmingSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Oct 8, 2019·15 cites·19 claims
- 2293US10153051B1Program-verify of select gate transistor with doped channel in NAND stringSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 11, 2018·16 cites·20 claims
- 2393US9905305B2Reducing hot electron injection type of read disturb in 3D non-volatile memory for edge word linesSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Feb 27, 2018·13 cites·22 claims
- 2492US11749353B2Managing sub-block erase operations in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 5, 2023·2 cites·20 claims
- 2592US10685723B1Reducing read disturb in two-tier memory device by modifying duration of channel discharge based on selected word lineSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 16, 2020·8 cites·20 claims
- 2691US10026487B2Non-volatile memory with customized control of injection type of disturb during program verify for improved program performanceSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 17, 2018·13 cites·20 claims
- 2791US9349478B2Read with look-back combined with programming with asymmetric boosting in memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted May 24, 2016·15 cites·21 claims
- 2891US9165659B1Efficient reprogramming method for tightening a threshold voltage distribution in a memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Oct 20, 2015·15 cites·19 claims
- 2990US10665306B1Memory device with discharge voltage pulse to reduce injection type of program disturbSANDISK TECHNOLOGIES LLC·Filed 2019·Granted May 26, 2020·10 cites·20 claims
- 3090US9324439B1Weak erase after programming to improve data retention in charge-trapping memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 26, 2016·14 cites·21 claims
- 3188US10522232B2Memory device with vpass step to reduce hot carrier injection type of program disturbSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Dec 31, 2019·9 cites·19 claims
- 3285US10811110B1Method of reducing injection type of program disturb during program pre-charge in memory deviceSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Oct 20, 2020·2 cites·20 claims
- 3383US10249372B2Reducing hot electron injection type of read disturb in 3D memory device during signal switching transientsSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Apr 2, 2019·6 cites·18 claims
- 3479US10748627B2Reducing neighbor word line interference in a two-tier memory device by modifying word line programming orderSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Aug 18, 2020·4 cites·20 claims
- 3577US12068037B2Managing sub-block erase operations in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 3676US10217518B1Reducing hot electron injection type of read disturb in 3D memory device having connected source-end select gatesSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Feb 26, 2019·4 cites·20 claims
- 3774US10593411B1Memory device with charge isolation to reduce injection type of program disturbSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Mar 17, 2020·3 cites·20 claims
- 3873US9041440B2Graphene-based frequency triplerPURDUE RESEARCH FOUNDATION·Filed 2014·Granted May 26, 2015·3 cites·15 claims
- 3971US11749359B2Short program verify recovery with reduced programming disturbance in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Sep 5, 2023·0 cites·20 claims
- 4070US12437818B2Corrective program verify operation with improved read window budget retentionMICRON TECHNOLOGY INC·Filed 2023·Granted Oct 7, 2025·0 cites·20 claims
- 4169US11688471B2Short program verify recovery with reduced programming disturbance in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 27, 2023·0 cites·20 claims
- 4266US12462875B2Program scheme for edge data wordlines in a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 4364US11670372B2Pre-boosting scheme during a program operation in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 4464US2025118365A1Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 4560US2025299753A1Pre-program on edge word lines for improved memory cell retention read window budgetMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4659US12211548B2Erase operation with electron injection for reduction of cell-to-cell interference in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims
- 4758US2025349371A1Memory device program operationMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 4847US11894069B2Unselected sub-block source line and bit line pre-charging to reduce read disturbMICRON TECHNOLOGY INC·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 4939US10121552B1Reducing charge loss in data memory cell adjacent to dummy memory cellSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Nov 6, 2018·0 cites·10 claims
- 5038US2021391016A1Modified seeding scheme during a program operation in a memory sub-systemMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →