Inventor · disambiguated record
Hou-Yu Chen
Also filed as: CHEN HOU-YU
106 granted patents·36 pending applications·570 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD124TAIWAN SEMICONDUCTOR MFG12UNIV PITTSBURGH COMMONWEALTH SYS HIGHER EDUCATION2CHAO DONALD Y1KUO CHIH-WEI1
Top patents by PatentIndex Score
142 records- 0199US11502168B2Tuning threshold voltage in nanosheet transitor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·7 cites·20 claims
- 0298US11862701B2Stacked multi-gate structure and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·5 cites·20 claims
- 0398US11710667B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 25, 2023·5 cites·20 claims
- 0498US11664374B2Backside interconnect structures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·7 cites·20 claims
- 0598US11251308B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·5 cites·20 claims
- 0698US11239208B2Packaged semiconductor devices including backside power rails and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·16 cites·20 claims
- 0798US9607838B1Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 28, 2017·25 cites·20 claims
- 0897US11610805B2Replacement material for backside gate cut featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 21, 2023·4 cites·20 claims
- 0997US11532627B2Source/drain contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·5 cites·20 claims
- 1097US11450600B2Semiconductor devices including decoupling capacitorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·5 cites·20 claims
- 1197US6518105B1High performance PD SOI tunneling-biased MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·214 cites·14 claims
- 1296US12170231B2Gate-all-around device with trimmed channel and dipoled dielectric layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 17, 2024·2 cites·20 claims
- 1395US12159869B2Backside interconnect structures for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·2 cites·20 claims
- 1495US11973077B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 30, 2024·2 cites·20 claims
- 1595US11444200B2Semiconductor structure with isolating feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
- 1695US9425313B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·14 cites·20 claims
- 1794US11380803B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·3 cites·20 claims
- 1894US9171925B2Multi-gate devices with replaced-channels and methods for forming the sameKUO CHIH-WEI·Filed 2012·Granted Oct 27, 2015·45 cites·20 claims
- 1994US9000536B2Fin field effect transistor having a highly doped regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 7, 2015·19 cites·20 claims
- 2094US8659032B2FinFET and method of fabricating the sameCHAO DONALD Y·Filed 2012·Granted Feb 25, 2014·22 cites·20 claims
- 2193US11735647B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 2293US10515966B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 24, 2019·5 cites·20 claims
- 2393US10056383B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·6 cites·20 claims
- 2492US12218224B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 2592US11735669B2Vertically-oriented complementary transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 22, 2023·2 cites·20 claims
- 2692US11658119B2Backside signal interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
- 2792US11652140B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·2 cites·20 claims
- 2891US11264508B2Leakage prevention structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 2991US9941368B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·7 cites·20 claims
- 3090US11855224B2Leakage prevention structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 3190US11757042B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·1 cites·20 claims
- 3290US11637101B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 25, 2023·2 cites·20 claims
- 3390US9634104B2FinFET and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 25, 2017·5 cites·19 claims
- 3490US9252271B2Semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 2, 2016·10 cites·20 claims
- 3589US11830854B2Packaged semiconductor devices including backside power rails and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·1 cites·20 claims
- 3689US11532720B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 3788US10276565B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·5 cites·20 claims
- 3888US9515167B2Raised epitaxial LDD in MuGFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·5 cites·20 claims
- 3988US2025366151A1Semiconductor structure with isolating featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4088US2025366197A1Hybrid cell-based layout methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4187US12094938B2Semiconductor device with low resistances and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·1 cites·20 claims
- 4286US9653581B2Semiconductor device and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·4 cites·20 claims
- 4386US9166044B2Raised epitaxial LDD in MuGFETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·5 cites·20 claims
- 4486US7943986B2Method for fabricating a body contact in a finfet structure and a device including the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 17, 2011·12 cites·15 claims
- 4585US11211477B2FinFETs having epitaxial capping layer on fin and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·2 cites·20 claims
- 4685US10797052B2Method and structure for FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·20 claims
- 4785US9166053B2FinFET device including a stepped profile structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·6 cites·20 claims
- 4884US12471353B2Gate-all around transistor with isolating feature under source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 4984US12021082B2Enhanced channel strain to reduce contact resistance in NMOS FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 5084US10109742B2Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 23, 2018·5 cites·20 claims
Showing the top 50 of 142 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →