Inventor · disambiguated record
Houqiang Fu
Also filed as: FU HOUQIANG
7 granted patents·3 pending applications·8 citations·filing 2018–2024
76Inventor score
Top patents by PatentIndex Score
10 records- 0184US10964749B2GaN-based threshold switching device and memory diodeFU KAI·Filed 2019·Granted Mar 30, 2021·4 cites·10 claims
- 0280US11495694B2GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)ZHAO YUJI·Filed 2021·Granted Nov 8, 2022·1 cites·10 claims
- 0376US10700218B2High-voltage aluminum nitride (AIN) schottky-barrier diodesUNIV ARIZONA STATE·Filed 2018·Granted Jun 30, 2020·2 cites·13 claims
- 0475US11527573B2GaN-based threshold switching device and memory diodeFU KAI·Filed 2021·Granted Dec 13, 2022·1 cites·10 claims
- 0569US12159943B2GaN vertical-channel junction field-effect transistors with regrown p-GaN by metal organic chemical vapor deposition (MOCVD)ZHAO YUJI·Filed 2022·Granted Dec 3, 2024·0 cites·15 claims
- 0660US2025107123A1Ga2o3 p-n junctions and method of manufacturing the sameFU HOUQIANG·Filed 2024·Application pending·0 cites
- 0760US2025107134A1kV-Class and Low RON Vertical ß-Ga2O3 HEMT-CAVET Power SwitchFU HOUQIANG·Filed 2024·Application pending·0 cites
- 0852US11626483B2Low-leakage regrown GaN p-n junctions for GaN power devicesZHAO YUJI·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
- 0952US11417529B2Plasma-based edge terminations for gallium nitride power devicesZHAO YUJI·Filed 2020·Granted Aug 16, 2022·0 cites·10 claims
- 1044US2020295214A1Pn junctions with mechanically exfoliated gallium oxide and gallium nitrideMONTES JOSSUE·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →