Inventor · disambiguated record
Horii Hideki
Also filed as: HIDEKI HORII
13 granted patents·2 pending applications·932 citations·filing 2000–2008
94Inventor score
Top patents by PatentIndex Score
15 records- 0198US6894305B2Phase-change memory devices with a self-heater structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 17, 2005·388 cites·31 claims
- 0297US7115927B2Phase changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 3, 2006·191 cites·27 claims
- 0395US7704787B2Methods for fabricating phase changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 27, 2010·41 cites·13 claims
- 0495US7462900B2Phase changeable memory devices including nitrogen and/or siliconSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 9, 2008·34 cites·22 claims
- 0595US6294425B1Methods of forming integrated circuit capacitors by electroplating electrodes from seed layersSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 25, 2001·131 cites·47 claims
- 0694US7476917B2Phase-changeable memory devices including nitrogen and/or silicon dopantsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·31 cites·12 claims
- 0791US7402851B2Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 22, 2008·49 cites·19 claims
- 0884US7387938B2Methods of forming phase change storage cells for memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 17, 2008·12 cites·23 claims
- 0981US7061013B2Phase change storage cells for memory devices, memory devices having phase change storage cells and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 13, 2006·23 cites·19 claims
- 1076US7485559B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 3, 2009·7 cites·15 claims
- 1171US6849892B2Phase changeable memory devices having reduced cell areasSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·15 cites·20 claims
- 1266US7750431B2Phase change storage cells for memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 6, 2010·4 cites·13 claims
- 1359US7378701B2Phase changeable memory devices including carbon nano tubesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 27, 2008·6 cites·16 claims
- 1443US2006016396A1Apparatus for depositing a thin film on a substrateKUH BONG-JIN·Filed 2005·Application pending·0 cites
- 1534US2005098814A1Methods of fabricating phase changeable memory devices having reduced cell areasFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →