Inventor · disambiguated record
Hong-Hui Hsu
Also filed as: HSU HONG-HUI
11 granted patents·9 pending applications·65 citations·filing 2005–2020
87Inventor score
Files withIND TECH RES INST14TAIWAN SEMICONDUCTOR MFG CO LTD2CHEN YI-CHAN1CHUO YEN1HEFECHIP CORPORATION LTD1
Top patents by PatentIndex Score
20 records- 0189US7964862B2Phase change memory devices and methods for manufacturing the sameIND TECH RES INST·Filed 2008·Granted Jun 21, 2011·21 cites·13 claims
- 0284US7923714B2Phase change memory cell structures and methods for manufacturing the sameIND TECH RES INST·Filed 2008·Granted Apr 12, 2011·16 cites·9 claims
- 0379US7989795B2Phase change memory device and method for fabricating the samePROMOS TECHNOLOGIES INC·Filed 2007·Granted Aug 2, 2011·10 cites·40 claims
- 0478US7626191B2Lateral phase change memory with spacer electrodesIND TECH RES INST·Filed 2006·Granted Dec 1, 2009·10 cites·8 claims
- 0572US7835177B2Phase change memory cell and method of fabricatingIND TECH RES INST·Filed 2006·Granted Nov 16, 2010·6 cites·9 claims
- 0665US9330915B2Surface pre-treatment for hard mask fabricationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 3, 2016·1 cites·18 claims
- 0759US11342496B2Semiconductor memory structure with magnetic tunneling junction stack and method for forming the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 0859US7598113B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2006·Granted Oct 6, 2009·1 cites·15 claims
- 0955US2020066177A1Multi-view display device and manipulation simulation deviceIND TECH RES INST·Filed 2019·Application pending·0 cites
- 1054US7868314B2Phase change memory device and fabricating method thereforIND TECH RES INST·Filed 2009·Granted Jan 11, 2011·0 cites·12 claims
- 1149US2008203374A1Phase-change memory and fabrication method thereofIND TECH RES INST·Filed 2008·Application pending·0 cites
- 1248US9385086B2Bi-layer hard mask for robust metallization profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 5, 2016·0 cites·21 claims
- 1346US2009014705A1Phase change memory device and method for fabricating the sameIND TECH RES INST·Filed 2008·Application pending·0 cites
- 1445US2008237562A1Phase change memory devices and fabrication methods thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 1544US2007291533A1Phase change memory device and fabrication method thereofIND TECH RES INST·Filed 2007·Application pending·0 cites
- 1644US2006148234A1Non-via method of connecting magnetoelectric elements with conductive lineIND TECH RES INST·Filed 2005·Application pending·0 cites
- 1743US8216877B2Phase-change memory and fabrication method thereofCHUO YEN·Filed 2011·Granted Jul 10, 2012·0 cites·7 claims
- 1843US2008179585A1Phase change memory device and method for fabricating the sameIND TECH RES INST·Filed 2007·Application pending·0 cites
- 1941US2008042117A1Phase-change memory and fabrication method thereofIND TECH RES INST·Filed 2006·Application pending·0 cites
- 2036US2007148862A1Phase-change memory layer and method of manufacturing the same and phase-change memory cellCHEN YI-CHAN·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →