Assignee
HEFECHIP CORPORATION LTD
HK·29 granted patents·16 pending applications·34 citations·filing 2019–2025
Top patents by PatentIndex Score
45 records- 0196US11217744B2Magnetic memory device with multiple sidewall spacers covering sidewall of MTJ element and method for manufacturing the sameHEFECHIP CORPORATION LTD·Filed 2019·Granted Jan 4, 2022·7 cites·23 claims
- 0296US11114140B1One time programmable (OTP) bits for physically unclonable functionsHEFECHIP CORPORATION LTD·Filed 2020·Granted Sep 7, 2021·5 cites·17 claims
- 0395US11315937B21.5-transistor (1.5T) one time programmable (OTP) memory with thin gate to drain dielectric and methods thereofHEFECHIP CORPORATION LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
- 0489US11114605B2Composite storage layer for magnetic random access memory devicesHEFECHIP CORPORATION LTD·Filed 2019·Granted Sep 7, 2021·3 cites·26 claims
- 0588US11244947B1Semiconductor device for a volatile memory and method of manufacturing semiconductor deviceHEFECHIP CORPORATION LTD·Filed 2020·Granted Feb 8, 2022·2 cites·22 claims
- 0687US11177431B2Magnetic memory device and method for manufacturing the sameHEFECHIP CORPORATION LTD·Filed 2019·Granted Nov 16, 2021·2 cites·22 claims
- 0787US11074985B1One-time programmable memory device and method for operating the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted Jul 27, 2021·2 cites·24 claims
- 0886US11139368B2Trench capacitor having improved capacitance and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2019·Granted Oct 5, 2021·3 cites·10 claims
- 0985US2026032881A1Semiconductor structure and method of forming sameHEFECHIP CORPORATION LTD·Filed 2025·Application pending·0 cites
- 1084US11362097B1One-time programmable memory device and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2020·Granted Jun 14, 2022·1 cites·17 claims
- 1183US11152381B1MOS transistor having lower gate-to-source/drain breakdown voltage and one-time programmable memory device using the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted Oct 19, 2021·1 cites·10 claims
- 1278US11545617B2Method of fabricating magnetic memory deviceHEFECHIP CORPORATION LTD·Filed 2021·Granted Jan 3, 2023·0 cites·5 claims
- 1376US11296090B2Semiconductor memory device with buried capacitor and fin-like electrodesHEFECHIP CORPORATION LTD·Filed 2019·Granted Apr 5, 2022·1 cites·13 claims
- 1476US2023413540A1One-time programmable memory unit cellHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 1572US11049862B2Semiconductor device and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2019·Granted Jun 29, 2021·2 cites·8 claims
- 1669US12464699B2Semiconductor structure and forming method thereofHEFECHIP CORPORATION LTD·Filed 2022·Granted Nov 4, 2025·0 cites·8 claims
- 1768US11610893B2Method for fabricating semiconductor memory device with buried capacitor and fin-like electrodesHEFECHIP CORPORATION LTD·Filed 2022·Granted Mar 21, 2023·0 cites·7 claims
- 1868US11456411B2Method for fabricating magnetic tunneling junction element with a composite capping layerHEFECHIP CORPORATION LTD·Filed 2019·Granted Sep 27, 2022·2 cites·6 claims
- 1968US2021408017A1Method for fabricating a metal-oxide-semiconductor transistorHEFECHIP CORPORATION LTD·Filed 2021·Application pending·0 cites
- 2064US12557554B2Methods for fabricating MRAM with void free interlayer dielectricHEFECHIP CORPORATION LTD·Filed 2023·Granted Feb 17, 2026·0 cites·20 claims
- 2164US11776992B2Trench capacitor having improved capacitance and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2021·Granted Oct 3, 2023·0 cites·10 claims
- 2259US12568768B2Methods for fabricating magnetoresistive random access memory with via under MJTHEFECHIP CORPORATION LTD·Filed 2022·Granted Mar 3, 2026·0 cites·14 claims
- 2359US12108684B2Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the sameHEFECHIP CORPORATION LTD·Filed 2021·Granted Oct 1, 2024·0 cites·36 claims
- 2459US11342496B2Semiconductor memory structure with magnetic tunneling junction stack and method for forming the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 2558US2024405015A1Semiconductor device with esd protection structure and method of making sameHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 2658US2024179896A11.5t otp memory device and method for fabricating sameHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 2757US2024306363A1Stacked capacitor, method for making the same and memory deviceHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 2855US2024032291A1Non-volatile memory, fabrication and control methods thereofHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 2955US2024276716A1Split-gate non-volatile memory device and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2023·Application pending·0 cites
- 3054US11538986B2Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory deviceHEFECHIP CORPORATION LTD·Filed 2020·Granted Dec 27, 2022·0 cites·28 claims
- 3153US12461450B2OPC modeling methodHEFECHIP CORPORATION LTD·Filed 2022·Granted Nov 4, 2025·0 cites·11 claims
- 3253US2024032290A1Split-gate non-volatile memory, fabrication and control methods thereofHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 3352US2023290855A1Transistor structure having an air spacer and method for making the sameHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 3451US2023240065A1Method of forming plug for semiconductor device and semiconductor device thereofHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 3551US2024081155A1Magnetic tunnel junction structure with non-magnetic amorphous insertion layerHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 3650US12250828B2Semiconductor structure and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2022·Granted Mar 11, 2025·0 cites·16 claims
- 3750US11763972B2Magnetic tunnel junction element with a robust reference layerHEFECHIP CORPORATION LTD·Filed 2021·Granted Sep 19, 2023·0 cites·16 claims
- 3850US11322500B2Stacked capacitor with horizontal and vertical fin structures and method for making the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted May 3, 2022·0 cites·19 claims
- 3950US2023317526A1Method to form semiconductor device and semiconductor device thereofHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 4049US12125873B2Method to form a fin structure on deep trenches for a semiconductor deviceHEFECHIP CORPORATION LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
- 4149US11437082B2Physically unclonable function circuit having lower gate-to-source/drain breakdown voltageHEFECHIP CORPORATION LTD·Filed 2020·Granted Sep 6, 2022·0 cites·17 claims
- 4249US11114442B2Semiconductor memory device with shallow buried capacitor and fabrication method thereofHEFECHIP CORPORATION LTD·Filed 2019·Granted Sep 7, 2021·0 cites·26 claims
- 4348US2020052191A1Magnetic tunnel junction element with a robust reference layerHEFECHIP CORPORATION LTD·Filed 2019·Application pending·0 cites
- 4447US2024087660A1Otp memory device, method for operating same and method for fabricating sameHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 4539US2021020215A1Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the sameHEFECHIP CORPORATION LTD·Filed 2019·Application pending·0 cites
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