Inventor · disambiguated record
Holger Huesken
Also filed as: HUESKEN HOLGER
15 granted patents·1 pending application·42 citations·filing 2002–2021
88Inventor score
Files withINFINEON TECHNOLOGIES AG13HUESKEN HOLGER1INFINEON TECHNOLOGIES AUSTRIA1INFINEON TECHNOLOGIES AUSTRIA AG1
Top patents by PatentIndex Score
16 records- 0180US10103227B2Method for manufacturing a power semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 16, 2018·2 cites·16 claims
- 0279US7112868B2IGBT with monolithic integrated antiparallel diodeINFINEON TECHNOLOGIES AG·Filed 2003·Granted Sep 26, 2006·26 cites·9 claims
- 0374US9419080B2Semiconductor device with recombination regionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Aug 16, 2016·3 cites·20 claims
- 0473US9041120B2Power MOS transistor with integrated gate-resistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 26, 2015·3 cites·18 claims
- 0565US9859272B2Semiconductor device with a reduced band gap zoneINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jan 2, 2018·1 cites·20 claims
- 0662US11532508B2Semiconductor device having contact layers and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2021·Granted Dec 20, 2022·0 cites·18 claims
- 0756US10950494B2Semiconductor device including first and second contact layers and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 16, 2021·0 cites·15 claims
- 0856US8809902B2Power semiconductor diode, IGBT, and method for manufacturing thereofHUESKEN HOLGER·Filed 2011·Granted Aug 19, 2014·1 cites·21 claims
- 0952US2015008477A1IGBT Having an Emitter Region with First and Second Doping RegionsINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Application pending·0 cites
- 1048US9548370B2Transistor device with integrated gate-resistorINFINEON TECHNOLOGIES AG·Filed 2015·Granted Jan 17, 2017·0 cites·7 claims
- 1148US9013027B2Semiconductor device, a semiconductor wafer structure, and a method for forming a semiconductor wafer structureINFINEON TECHNOLOGIES AG·Filed 2013·Granted Apr 21, 2015·0 cites·21 claims
- 1245US9490354B2Insulated gate bipolar transistorINFINEON TECHNOLOGIES AG·Filed 2014·Granted Nov 8, 2016·0 cites·9 claims
- 1345US7005761B2Circuit configuration for off-load switching, switch mode power supply, clocked supply, voltage regulator, lamp switch, and methods for operating the circuit configurationINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 28, 2006·6 cites·34 claims
- 1442US10998399B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 4, 2021·0 cites·19 claims
- 1538US9515149B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Dec 6, 2016·0 cites·18 claims
- 1637US9577080B2Power semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2015·Granted Feb 21, 2017·0 cites·16 claims
Join the waitlist — get patent alerts
Get an alert when Holger Huesken files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →