Inventor · disambiguated record
Hoiman Hung
Also filed as: HUNG HOIMAN · HUNG HOIMAN RAYMOND
10 granted patents·3 pending applications·1,141 citations·filing 1998–2006
93Inventor score
Files withAPPLIED MATERIALS INC9
Top patents by PatentIndex Score
13 records- 0195US6602434B1Process for etching oxide using hexafluorobutadiene or related fluorocarbons and manifesting a wide process windowAPPLIED MATERIALS INC·Filed 1999·Granted Aug 5, 2003·280 cites·54 claims
- 0294US6797189B2Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbonFiled 1999·Granted Sep 28, 2004·217 cites·29 claims
- 0393US6762127B2Etch process for dielectric materials comprising oxidized organo silane materialsFiled 2001·Granted Jul 13, 2004·320 cites·28 claims
- 0490US6921727B2Method for modifying dielectric characteristics of dielectric layersAPPLIED MATERIALS INC·Filed 2003·Granted Jul 26, 2005·61 cites·35 claims
- 0587US6387287B1Process for etching oxide using a hexafluorobutadiene and manifesting a wide process windowAPPLIED MATERIALS INC·Filed 1999·Granted May 14, 2002·94 cites·18 claims
- 0684US6380096B2In-situ integrated oxide etch process particularly useful for copper dual damasceneAPPLIED MATERIALS INC·Filed 1998·Granted Apr 30, 2002·96 cites·24 claims
- 0781US6432318B1Dielectric etch process reducing striations and maintaining critical dimensionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 13, 2002·24 cites·16 claims
- 0879US6849193B2Highly selective process for etching oxide over nitride using hexafluorobutadieneFiled 2002·Granted Feb 1, 2005·23 cites·41 claims
- 0970US6800213B2Precision dielectric etch using hexafluorobutadieneFiled 2002·Granted Oct 5, 2004·11 cites·22 claims
- 1049US2006246683A1Integrated equipment set for forming a low K dielectric interconnect on a substrateAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 1147US6544429B1Enhancement of silicon oxide etch rate and substrate selectivity with xenon additionAPPLIED MATERIALS INC·Filed 1999·Granted Apr 8, 2003·15 cites·34 claims
- 1241US2004007325A1Integrated equipment set for forming a low K dielectric interconnect on a substrateAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 1336US2003037879A1Top gas feed lid for semiconductor processing chamberAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →