Inventor · disambiguated record
Hokuto Kodate
Also filed as: KODATE HOKUTO
5 granted patents·7 pending applications·44 citations·filing 2018–2023
75Inventor score
Top patents by PatentIndex Score
12 records- 0193US11322597B2Gate material-based capacitor and resistor structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·3 cites·20 claims
- 0292US10910020B1Three-dimensional memory device containing compact bit line switch circuit and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Feb 2, 2021·19 cites·20 claims
- 0390US10256167B1Hydrogen diffusion barrier structures for CMOS devices and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Apr 9, 2019·22 cites·21 claims
- 0458US2024147730A1Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0557US2024153994A1Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0657US2024072042A1Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0756US2024063278A1Transistor circuits including fringeless transistors and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2023·Application pending·0 cites
- 0855US2024373639A1Three-dimensional memory device containing peripheral circuit with fin field effect transistors and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 0955US2025040239A1High voltage field effect transistors with different sidewall spacer configurations and method of making the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1054US2025142913A1Peripheral circuit with semiconductor pillar containing local interconnects and methods for forming the sameWESTERN DIGITAL TECH INC·Filed 2023·Application pending·0 cites
- 1150US12356704B2Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 8, 2025·0 cites·2 claims
- 1248US11626397B2Gate material-based capacitor and resistor structures and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →