Inventor · disambiguated record
Hotaka Maruyama
Also filed as: MARUYAMA HOTAKA
42 granted patents·5 pending applications·684 citations·filing 2005–2024
98Inventor score
Files withSEMICONDUCTOR ENERGY LAB34YAMAZAKI SHUNPEI5OIKAWA YOSHIAKI3AKIMOTO KENGO2TOKYO ELECTRON LTD2
Top patents by PatentIndex Score
47 records- 0199US11024747B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2020·Granted Jun 1, 2021·8 cites·6 claims
- 0299US8502225B2Light-emitting device and method for manufacturing the sameYAMAZAKI SHUNPEI·Filed 2010·Granted Aug 6, 2013·48 cites·16 claims
- 0399US8377762B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2010·Granted Feb 19, 2013·79 cites·10 claims
- 0498US9666820B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted May 30, 2017·24 cites·7 claims
- 0598US9583509B2Semiconductor device wherein an oxide semiconductor layer has a degree of crystallization of 80% or moreSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Feb 28, 2017·19 cites·12 claims
- 0698US8654272B2Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state which is in contact with a second insulatng layerYAMAZAKI SHUNPEI·Filed 2010·Granted Feb 18, 2014·37 cites·14 claims
- 0797US10374184B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Aug 6, 2019·12 cites·21 claims
- 0897US9431465B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Aug 30, 2016·15 cites·18 claims
- 0997US9153602B2Semiconductor device wherein an oxide semiconductor layer comprises a crystal and has a degree of crystallization of 80% or moreSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Oct 6, 2015·26 cites·16 claims
- 1097US8957411B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Feb 17, 2015·20 cites·10 claims
- 1197US8885115B2Semiconductor device wherein each of a first oxide semiconductor layer and a second oxide semiconductor layer includes a portion that is in an oxygen-excess state and is in contact with an insulating layerSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Nov 11, 2014·23 cites·19 claims
- 1297US8664036B2Semiconductor device and manufacturing method thereofYAMAZAKI SHUNPEI·Filed 2010·Granted Mar 4, 2014·35 cites·22 claims
- 1397US8637347B2Method for manufacturing semiconductor deviceOIKAWA YOSHIAKI·Filed 2010·Granted Jan 28, 2014·28 cites·35 claims
- 1497US8502220B2Semiconductor device and manufacturing method thereofYAMAZAKI SHUNPEI·Filed 2010·Granted Aug 6, 2013·45 cites·10 claims
- 1596US10243005B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Mar 26, 2019·12 cites·16 claims
- 1696US9865471B2Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2016·Granted Jan 9, 2018·43 cites·11 claims
- 1796US9466756B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Oct 11, 2016·24 cites·14 claims
- 1896US9391095B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Jul 12, 2016·25 cites·22 claims
- 1995US8399313B2Method of manufacturing semiconductor device having first conductive layer including aluminumAKIMOTO KENGO·Filed 2011·Granted Mar 19, 2013·21 cites·31 claims
- 2095US8174021B2Semiconductor device and method of manufacturing the semiconductor deviceOIKAWA YOSHIAKI·Filed 2010·Granted May 8, 2012·17 cites·18 claims
- 2195US8003449B2Method of manufacturing a semiconductor device having a reverse staggered thin film transistorSEMICONDUCTOR ENERGY LAB·Filed 2005·Granted Aug 23, 2011·27 cites·103 claims
- 2294US11997859B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2022·Granted May 28, 2024·1 cites·6 claims
- 2394US10672915B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Jun 2, 2020·7 cites·20 claims
- 2494US9837442B2Semiconductor device comprising a plurality of N-channel transistors wherein the oxide semiconductor layer comprises a portion being in an oxygen-excess stateSEMICONDUCTOR ENERGY LAB·Filed 2016·Granted Dec 5, 2017·12 cites·12 claims
- 2594US9537012B2Semiconductor device with oxide semiconductor layerSEMICONDUCTOR ENERGY LAB·Filed 2015·Granted Jan 3, 2017·9 cites·15 claims
- 2694US8541780B2Semiconductor device having oxide semiconductor layerYAMAZAKI SHUNPEI·Filed 2010·Granted Sep 24, 2013·14 cites·20 claims
- 2793US11171298B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2019·Granted Nov 9, 2021·4 cites·16 claims
- 2892US11469387B2Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2021·Granted Oct 11, 2022·1 cites·10 claims
- 2991US9130041B2Semiconductor device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Sep 8, 2015·9 cites·12 claims
- 3089US8305109B2Logic circuit, light emitting device, semiconductor device, and electronic deviceOKAZAKI KENICHI·Filed 2010·Granted Nov 6, 2012·12 cites·24 claims
- 3189US2024387744A1Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2024·Application pending·0 cites
- 3287US2024306410A1Light-emitting device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2024·Application pending·0 cites
- 3386US11626521B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2020·Granted Apr 11, 2023·1 cites·5 claims
- 3484US12057511B2Light-emitting device and method for manufacturing the sameSEMICONDUCTOR ENERGY LAB·Filed 2023·Granted Aug 6, 2024·0 cites·6 claims
- 3584US7696024B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2007·Granted Apr 13, 2010·11 cites·22 claims
- 3682US10297679B2Method for manufacturing semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2018·Granted May 21, 2019·2 cites·16 claims
- 3778US9431427B2Semiconductor device comprising oxide semiconductor layerSEMICONDUCTOR ENERGY LAB·Filed 2014·Granted Aug 30, 2016·2 cites·18 claims
- 3876US9887276B2Method for manufacturing semiconductor device having oxide semiconductorSEMICONDUCTOR ENERGY LAB·Filed 2013·Granted Feb 6, 2018·2 cites·35 claims
- 3976US8877569B2Method of manufacturing thin film transistor with oxide semiconductor using sputtering methodOIKAWA YOSHIAKI·Filed 2012·Granted Nov 4, 2014·2 cites·14 claims
- 4069US7759629B2Method for manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2008·Granted Jul 20, 2010·3 cites·8 claims
- 4166US8358144B2Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicideSEMICONDUCTOR ENERGY LAB·Filed 2010·Granted Jan 22, 2013·2 cites·24 claims
- 4261US7842520B2Method for manufacturing semiconductor device, semiconductor inspection device, and program including color imaging of metal silicide and calculations thereofSEMICONDUCTOR ENERGY LAB·Filed 2006·Granted Nov 30, 2010·2 cites·14 claims
- 4356US2016343740A1Semiconductor device and method of manufacturing the semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2016·Application pending·0 cites
- 4449US10720328B2Etching method and etching apparatusTOKYO ELECTRON LTD·Filed 2019·Granted Jul 21, 2020·0 cites·9 claims
- 4547US8035077B2Method for manufacturing a semiconductor deviceSEMICONDUCTOR ENERGY LAB·Filed 2010·Granted Oct 11, 2011·0 cites·17 claims
- 4644US2006091397A1Display device and method for manufacturing the sameAKIMOTO KENGO·Filed 2005·Application pending·0 cites
- 4736US2011062432A1Semiconductor device and manufacturing method thereofSEMICONDUCTOR ENERGY LAB·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →