Inventor · disambiguated record
Hongyi Mi
Also filed as: MI HONGYI
9 granted patents·3 pending applications·11 citations·filing 2015–2024
80Inventor score
Top patents by PatentIndex Score
12 records- 0192US12003870B2Binning in hybrid pixel structure of image pixels and event vision sensor (EVS) pixelsSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Granted Jun 4, 2024·2 cites·20 claims
- 0291US11195869B2Solid-state imaging device and imaging device with shared circuit elementsSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2019·Granted Dec 7, 2021·7 cites·20 claims
- 0378US10749062B2Hybrid tandem solar cells with improved tunnel junction structuresWISCONSIN ALUMNI RES FOUND·Filed 2018·Granted Aug 18, 2020·1 cites·9 claims
- 0469US2025247634A1Binning in hybrid pixel structure of image pixels and event vision sensor (evs) pixelsSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2023·Application pending·0 cites
- 0568US9899556B2Hybrid tandem solar cells with improved tunnel junction structuresWISCONSIN ALUMNI RES FOUND·Filed 2015·Granted Feb 20, 2018·1 cites·16 claims
- 0653US12310136B2Solid-state imaging device and imaging device with shared circuit elementsSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2020·Granted May 20, 2025·0 cites·20 claims
- 0753US11979675B2Image sensing device with event based vision sensor pixels and imaging pixelsSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Granted May 7, 2024·0 cites·11 claims
- 0853US2025301808A1Light detecting devices with doped transfer gates and systems and methods for the sameSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2024·Application pending·0 cites
- 0952US10378876B2Piezoresistive strain sensors comprising electrically conducting networks in polymeric phase change materialsWISCONSIN ALUMNI RES FOUND·Filed 2016·Granted Aug 13, 2019·0 cites·23 claims
- 1048US9834714B2Photoresponsive, form-stable phase change composites and photodetectors made therefromWISCONSIN ALUMNI RES FOUND·Filed 2016·Granted Dec 5, 2017·0 cites·21 claims
- 1147US11929383B2Intra-pixel crosstalk reduction for a multi-mode image sensorSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 1237US2019326112A1DEFECT FREE SILICON GERMANIUM (SiGe) EPITAXY GROWTH IN A LOW-K SPACER CAVITY AND METHOD FOR PRODUCING THE SAMEGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →