Inventor · disambiguated record
Hongxiang Mo
Also filed as: MO HONGXIANG
1 granted patent·2 pending applications·3 citations·filing 2013–2022
20Inventor score
Top patents by PatentIndex Score
3 records- 0171US9419139B2Nitride layer protection between PFET source/drain regions and dummy gate during source/drain etchGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 16, 2016·3 cites·15 claims
- 0247US2022375946A1Barrier and thin spacer for 3d-nand cuaIntel NDTM US LLC·Filed 2022·Application pending·0 cites
- 0333US2014357073A1Systems and methods for fabricating gate structures for semiconductor devicesGLOBALFOUNDRIES INC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →