Inventor · disambiguated record
Holger Ruething
Also filed as: RUETHING HOLGER
14 granted patents·1 pending application·82 citations·filing 2006–2019
90Inventor score
Files withINFINEON TECHNOLOGIES AG6INFINEON TECHNOLOGIES AUSTRIA6BAGINSKI PATRICK2BOSCH GMBH ROBERT1
Top patents by PatentIndex Score
15 records- 0193US10132696B2Integrated temperature sensor for discrete semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2014·Granted Nov 20, 2018·13 cites·22 claims
- 0290US8344415B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Jan 1, 2013·12 cites·15 claims
- 0390US7470952B2Power IGBT with increased robustnessINFINEON TECHNOLOGIES AG·Filed 2006·Granted Dec 30, 2008·22 cites·10 claims
- 0482US8155916B2Semiconductor component and method of determining temperatureBAGINSKI PATRICK·Filed 2008·Granted Apr 10, 2012·12 cites·13 claims
- 0582US7880200B2Semiconductor device including a free wheeling diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2007·Granted Feb 1, 2011·10 cites·19 claims
- 0675US7932583B2Reduced free-charge carrier lifetime deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Apr 26, 2011·6 cites·19 claims
- 0775US7557386B2Reverse conducting IGBT with vertical carrier lifetime adjustmentINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Jul 7, 2009·6 cites·14 claims
- 0860US9312334B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 12, 2016·0 cites·4 claims
- 0959US8478559B2Semiconductor component and method of making the sameBAGINSKI PATRICK·Filed 2012·Granted Jul 2, 2013·1 cites·8 claims
- 1056US8860133B2Semiconductor componentINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Oct 14, 2014·0 cites·9 claims
- 1153US9543405B2Method of manufacturing a reduced free-charge carrier lifetime semiconductor structureINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jan 10, 2017·0 cites·19 claims
- 1252US10712208B2Integrated temperature sensor for discrete semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2018·Granted Jul 14, 2020·0 cites·13 claims
- 1350US2010117117A1Vertical IGBT DeviceINFINEON TECHNOLOGIES AG·Filed 2008·Application pending·0 cites
- 1441US11387359B2Ppower semiconductor device with anticorrosive edge termination structureINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 12, 2022·0 cites·20 claims
- 1540US9478613B2Semiconductor system for a current sensor in a power semiconductorBOSCH GMBH ROBERT·Filed 2013·Granted Oct 25, 2016·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →