Inventor · disambiguated record

Horng-Huei Tseng

Also filed as: TSENG HORNG H · TSENG HORNG-HUEI

414 granted patents·38 pending applications·5,997 citations·filing 1991–2025

99Inventor score

Technology areasH10D H10P H10W H10B H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD190 VANGUARD INT SEMICONDUCT CORP183 TAIWAN SEMICONDUCTOR MFG35 IND TECH RES INST16 TSENG HORNG-HUEI5

Top patents by PatentIndex Score

452 records

0198US11177178B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 16, 2021·4 cites·20 claims
0298US9627379B1FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·35 cites·20 claims
0398US9620610B1FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·22 cites·19 claims
0498US9601492B1FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·34 cites·19 claims
0598US9461044B1Fin field effect transistor, semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·44 cites·20 claims
0697US9953874B2FinFETs and methods of forming FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 24, 2018·18 cites·20 claims
0797US9576908B1Interconnection structure, fabricating method thereof, and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 21, 2017·14 cites·20 claims
0897US7224427B2Megasonic immersion lithography exposure apparatus and methodTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 29, 2007·95 cites·31 claims
0997US6358800B1Method of forming a MOSFET with a recessed-gate having a channel length beyond photolithography limitVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Mar 19, 2002·148 cites·8 claims
1097US6335257B1Method of making pillar-type structure on semiconductor substrateVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Jan 1, 2002·159 cites·10 claims
1196US10355110B2FinFET and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·11 cites·20 claims
1296US10164046B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·20 claims
1396US9929271B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·10 cites·20 claims
1496US9773912B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 26, 2017·11 cites·20 claims
1596US9761483B1Semiconductor devices, FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·13 cites·20 claims
1696US9716154B2Semiconductor structure having a gas-filled gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·12 cites·20 claims
1796US9704751B1Semiconductor device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·15 cites·20 claims
1896US9704752B1Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 11, 2017·16 cites·20 claims
1996US9570567B1Source and drain process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·14 cites·20 claims
2096US5716883AMethod of making increased surface area, storage node electrode, with narrow spaces between polysilicon columnsVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Feb 10, 1998·164 cites·31 claims
2195US11682625B2Interconnection structure, fabricating method thereof, and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
2295US10164029B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·10 cites·20 claims
2395US9947592B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·13 cites·19 claims
2495US9685554B1Fin field effect transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·9 cites·20 claims
2595US9659813B1Interconnection and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·14 cites·20 claims
2695US9530887B1Fin-type field effect transistor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 27, 2016·15 cites·20 claims
2795US7221584B2MRAM cell having shared configurationTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 22, 2007·27 cites·26 claims
2895US6596589B2Method of manufacturing a high coupling ratio stacked gate flash memory with an HSG-SI layerVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Jul 22, 2003·99 cites·14 claims
2995US6429123B1Method of manufacturing buried metal lines having ultra fine featuresVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Aug 6, 2002·92 cites·16 claims
3094US10096712B2FinFET device and method of forming and monitoring quality of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 9, 2018·7 cites·20 claims
3194US9954081B2Fin field effect transistor, semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·10 cites·15 claims
3294US9887136B2Semiconductor devices, FinFET devices, and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 6, 2018·9 cites·20 claims
3394US9768170B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·9 cites·12 claims
3494US9721896B2Interconnection structure, fabricating method thereof, and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·8 cites·20 claims
3594US9570493B2Dielectric grid bottom profile for light focusingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·12 cites·17 claims
3694US6340614B1Method of forming a DRAM cellVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Jan 22, 2002·64 cites·20 claims
3793US11411001B2Integrated circuit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·2 cites·20 claims
3893US10217741B2Fin structure and method of forming same through two-step etching processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 26, 2019·7 cites·18 claims
3993US10090206B2FinFET gate structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 2, 2018·6 cites·20 claims
4093US10032877B2FinFET and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 24, 2018·8 cites·20 claims
4193US9847330B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 19, 2017·7 cites·13 claims
4293US7545662B2Method and system for magnetic shielding in semiconductor integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jun 9, 2009·31 cites·20 claims
4392US10283605B2Self-aligned metal gate etch back process and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 7, 2019·7 cites·20 claims
4492US10263113B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 16, 2019·4 cites·20 claims
4592US10020304B2Fin field effect transistor, semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 10, 2018·6 cites·8 claims
4692US5801082AMethod for making improved shallow trench isolation with dielectric studs for semiconductor integrated circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Sep 1, 1998·143 cites·26 claims
4791US10868138B2Metal gate formation through etch back processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·20 claims
4891US10297548B2Interconnection structure, fabricating method thereof, and semiconductor device using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 21, 2019·4 cites·20 claims
4991US10170427B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·6 cites·20 claims
5091US9653364B1FinFET device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·8 cites·20 claims

Showing the top 50 of 452 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →