Inventor · disambiguated record
Hsiao-Chun Chang
Also filed as: CHANG HSIAO-CHUN
11 granted patents·8 pending applications·6 citations·filing 2019–2025
83Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD19
Top patents by PatentIndex Score
19 records- 0194US11404274B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0291US11923439B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·1 cites·20 claims
- 0384US12288815B2Source/drain structure with enhanced dopant diffusion for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 0482US12490454B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
- 0580US2025366123A1Semiconductor devices with modulated gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0680US2025234576A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0779US11232989B2Devices with adjusted fin profile and methods for manufacturing devices with adjusted fin profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 25, 2022·2 cites·20 claims
- 0877US2025344448A1Multigate Device Structure with Engineered GateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0975US11961911B2Semiconductor devices including channel regions having non-uniform Ge concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·21 claims
- 1073US2024405075A1Semiconductor devices having counter-doped structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1173US2024379755A1Semiconductor devices with counter-doped nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1272US2024379877A1Surface-doped channels for threshold voltage modulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1371US12484251B2Multigate device structure with engineered gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1469US2022359768A1Surface-Doped Channels for Threshold Voltage ModulationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 1568US12300718B2Semiconductor devices with counter-doped nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 1663US2022336587A1Semiconductor devices having counter-doped structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 1762US12062581B2Devices with adjusted fin profile and methods for manufacturing devices with adjusted fin profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1862US11296227B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·0 cites·20 claims
- 1951US11322603B2Anti-punch-through doping on source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →