Inventor · disambiguated record
Hsiang-Pi Chang
Also filed as: CHANG HSIANG · CHANG HSIANG-PI
33 granted patents·20 pending applications·60 citations·filing 2006–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD45TAIWAN SEMICONDUCTOR MFG3EPISTAR CORP2LIN KUO-YIN1PENG CHIH I1
Top patents by PatentIndex Score
53 records- 0197US11031508B2Semiconductor device with treated interfacial layer on silicon germaniumTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·4 cites·20 claims
- 0296US11581416B1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 0395US11978674B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·2 cites·18 claims
- 0495US11688812B2Semiconductor device with treated interfacial layer on silicon germaniumTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·2 cites·20 claims
- 0595US8889497B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 18, 2014·22 cites·20 claims
- 0693US11894461B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0792US10629749B2Method of treating interfacial layer on silicon germaniumTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·5 cites·20 claims
- 0889US9592585B2System and method for CMP station cleanlinessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Mar 14, 2017·8 cites·12 claims
- 0987US2025366075A1Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1086US2025351481A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1184US12148843B2Semiconductor device with treated interfacial layer on silicon germaniumTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1284US2025323056A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1383US12369384B2Semiconductor device structure including dielectric region with plurality of different oxidation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1482US2025324728A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1581US11031291B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·2 cites·20 claims
- 1680US12406859B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·20 claims
- 1780US9960085B2Multiple patterning techniques for metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 1, 2018·3 cites·20 claims
- 1880US2025366002A1Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1980US2025063778A1Gate structure in semiconductor method and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2079US12477784B2Dipoles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 2179US11227975B2Semiconductor structure having a bridge layerEPISTAR CORP·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 2279US2024150192A1Gate Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2379US2025359211A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2478US10978357B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
- 2578US2025359175A1Gate Dielectric for Gate Leakage ReductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2677US12402394B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 2777US2025324733A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2874US12166074B2Gate structure in semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 10, 2024·0 cites·20 claims
- 2969US12490467B2Transistor and semiconductor device with multiple threshold voltages and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·20 claims
- 3069US9153657B2Semiconductor devices comprising a finTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 6, 2015·2 cites·20 claims
- 3168US12426292B2Semiconductor device with tunable threshold voltage and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 3267US11842927B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 3366US11710779B2Semiconductor device including interface layer and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 3465US12513951B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·20 claims
- 3565US2024266415A1Gate Dielectric for Gate Leakage ReductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3665US2022102582A1Semiconductor structureEPISTAR CORP·Filed 2021·Application pending·0 cites
- 3760US10971402B2Semiconductor device including interface layer and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 6, 2021·0 cites·20 claims
- 3859US11908702B2Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 3956US10279311B2System and method for operating chemical mechanical polishing processPENG CHIH I·Filed 2012·Granted May 7, 2019·1 cites·20 claims
- 4056US7678633B2Method for forming substrates for MOS transistor components and its productsUNIV TSINGHUA·Filed 2006·Granted Mar 16, 2010·1 cites·26 claims
- 4155US12495566B2Semiconductor device having strained channel and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 4254US10985265B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 4354US2024405093A1Crystallization temperature reduction of high-k dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4453US2024339329A1Gas phase treatment for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4551US2023411520A1Semiconductor structure including semiconductor devices with different threshold voltages and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4651US2025176213A1Semiconductor device including interfacial layer with cet scaling and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4750US2024313064A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4850US2024304667A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4948US2024030311A1Semiconductor device including a self-aligned contact layer with enhanced etch resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 5047US2024332091A1Gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 53 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →