Semiconductor structure

Abstract

A semiconductor structure includes a carrier, a bonding structure, a semiconductor stack, a supporting element and a bridge layer. The bonding structure is on the carrier and has an upper surface. The semiconductor stack is on the bonding structure. The supporting element is on the bonding structure and has a side wall. The bridge layer has a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion. The second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure. The first portion of the bridge layer directly contacts the side wall of the supporting element.

What is claimed is: 
     
         1 . A semiconductor structure, comprising:
 a carrier;   a bonding structure on the carrier and having an upper surface;   a semiconductor stack on the bonding structure;   a supporting element on the bonding structure and having a side wall; and   a bridge layer having a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion;   wherein the second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure, and the first portion of the bridge layer directly contacts the side wall of the supporting element.   
     
     
         2 . The semiconductor structure of  claim 1 , wherein the semiconductor stack is overlapped with the third portion of the bridge layer. 
     
     
         3 . The semiconductor structure of  claim 1 , wherein the semiconductor stack is not overlapped with the second portion of the bridge layer. 
     
     
         4 . The semiconductor structure of  claim 1 , wherein the semiconductor stack comprises a first semiconductor layer, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer. 
     
     
         5 . The semiconductor structure of  claim 4 , wherein the active layer is not overlapped with the first portion and the second portion of the bridge layer. 
     
     
         6 . The semiconductor structure of  claim 1 , wherein the bonding structure includes BCB, COC, fluorocarbon polymer, PI, PFCB, oxide, nitride or metal. 
     
     
         7 . The semiconductor structure of  claim 1 , wherein the bridge layer includes oxide or nitride. 
     
     
         8 . The semiconductor structure of  claim 1 , further comprising a sacrificial layer between the bonding structure and the bridge layer. 
     
     
         9 . The semiconductor structure of  claim 1 , wherein the supporting element has a first part having a first side wall and a second part having a second side wall under the first side wall, and the first portion of the bridge layer covers the first side wall without covering the second side wall. 
     
     
         10 . The semiconductor structure of  claim 1 , further comprising a first electrode and a second electrode connected to the semiconductor stack. 
     
     
         11 . The semiconductor structure of  claim 10 , wherein the first electrode and the second electrode are suspended above the upper surface of the bonding structure. 
     
     
         12 . The semiconductor structure of  claim 10 , wherein the first electrode and the second electrode are disposed at the same side of the semiconductor stack. 
     
     
         13 . The semiconductor structure of  claim 1 , wherein the semiconductor stack has a side surface, and the second portion of the bridge layer is protruded from the side surface of the semiconductor stack. 
     
     
         14 . The semiconductor structure of  claim 1 , wherein the first portion of the bridge layer has a first width and the second portion of the bridge layer has a second width less than the first width. 
     
     
         15 . The semiconductor structure of  claim 1 , wherein the first portion of the bridge layer has a first width and the third portion of the bridge layer has a third width larger than the first width. 
     
     
         16 . The semiconductor structure of  claim 1 , wherein the first portion of the bridge layer has a first length and the second portion of the bridge layer has a second length less than the first length. 
     
     
         17 . The semiconductor structure of  claim 1 , wherein the bridge layer has a first thickness and the supporting element has a second thickness larger than the first thickness. 
     
     
         18 . The semiconductor structure of  claim 1 , wherein the bridge layer has a first thickness and the semiconductor stack has a third thickness larger than the first thickness. 
     
     
         19 . The semiconductor structure of  claim 1 , wherein the semiconductor stack is suspended above the upper surface of the bonding structure. 
     
     
         20 . A semiconductor structure, comprising:
 a carrier;   a bonding structure on the carrier and having an upper surface; and   a plurality of semiconductor devices on the upper surface of the carrier and forming an array, and each of the plurality of semiconductor devices comprising:   a semiconductor stack on the bonding structure;   a supporting element on the bonding structure and having a side wall; and   a bridge layer having a first portion directly connected to the supporting element, a second portion connected to the first portion and a third portion connected to the second portion;   wherein the second portion and the third portion of the bridge layer are suspended above the upper surface of the bonding structure, and the first portion of the bridge layer directly contacts the side wall of the supporting element.